The planar 6H-SiC ACCUFET: a new high-voltage power MOSFET structure

Shenoy, P.M.; Baliga, B. Jayant

doi:10.1109/55.644080

Cited by 95 publications

(24 citation statements)

References 9 publications

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“…Si Si 4H-SiC MOSFET 10 cm 2 /Vs (2) (4) (6) SiC SIAFET (7) (8) SEMOSFET (9) SiC JFET (10) (11) JFET SEJFET Static Expansion channel JFET (12) (13) 2. …”

Section: Simentioning

confidence: 99%

Electric characteristics of normally-off type 5 kV class 4H-SiC JFET, "SEJEET"

et al. 2005

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A normally-off type 5.3 kV 4H-SiC JFET with low specific on-resistance, called SEJFET (Static Expansion channel JFET), has been fabricated. Its normally-off operation was realized by a thin regrown epitaxial channel layer and using the buried p+ regions as a gate in addition to the top p+ regions. The achieved blocking voltage is the highest class BV among the reported SiC JFET. In a 5.3 kV 4H-SiC SEJFET, the lowest specific on resistance of 69 mΩcm 2 .Furthermore, the highest current capability among SiC JFET of 3.3 A is achieved. In all reported FETs, the SEJFET has the best trade-off between RonS and blocking voltage (BV), which is about 1/230 th lower than theoretical limit of a Si FET. Furthermore, the figure of merit (BV 2 /RonS) is 407 MW/cm 2 , and this value is the highest among reported normally off SiC FETs.SiC JFET SEJFET

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“…Si Si 4H-SiC MOSFET 10 cm 2 /Vs (2) (4) (6) SiC SIAFET (7) (8) SEMOSFET (9) SiC JFET (10) (11) JFET SEJFET Static Expansion channel JFET (12) (13) 2. …”

Section: Simentioning

confidence: 99%

Electric characteristics of normally-off type 5 kV class 4H-SiC JFET, "SEJEET"

et al. 2005

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“…To circumvent the low electron inversion layer mobility, normally-off accumulation type MOSFET's have become popular and have been demonstrated (Hara 1998;Shenoy & Baliga 1997;Tan, et. al.…”

Section: Mosfetmentioning

confidence: 99%

High-Temperature Electronics in Europe

Dmitriev¹,

Chow²,

DenBaars³

et al. 2000

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Support is provided by a variety of U.S. government agencies, including ONR, DoC, and NSF.ITRI's mission is two-pronged: (1) to inform U.S. policymakers, strategic planners, and managers of the state of selected technologies in foreign countries in comparison to the United States; and (2) to identify opportunities for international cooperation among countries and collaboration among researchers. ITRI assessments cover basic research, advanced development, and applications. Panels of typically six technical experts conduct these assessments. Panelists are leading authorities in their fields, technically active, and knowledgeable about U.S. and foreign research programs. As part of the assessment process, panels visit and carry out extensive discussions with foreign scientists and engineers in their labs.The ITRI staff at Loyola College helps select topics, recruits expert panelists, arranges study visits to foreign laboratories, organizes workshop presentations, and finally, edits and disseminates the final reports. HIGH-TEMPERATURE ELECTRONICS IN EUROPE August 2000Vladimir Dmitriev (Chair) T. Paul Chow Steven P. DenBaars Michael S. Shur Michael G. Spencer George White This document was sponsored by the Office of Naval Research (ONR) and the National Science Foundation (NSF) under ONR Grant NOOO14-99-1-0529 and NSF Cooperative Agreement ENG-9707092, both awarded to the International Technology Research Institute at Loyola College in Maryland. The government has certain rights in this material. Any opinions, findings, and conclusions or recommendations expressed in this material are those of the authors and do not necessarily reflect the views of the United States government, the authors' parent institutions, or Loyola College. ABSTRACTThis final report of ITRI's panel on high-temperature electronics in Europe consists of an executive summary, an introductory chapter, and six chapters by panel members on various aspects of wide bandgap electronics. The report also contains site reports for the various companies, labs, universities, and government offices that the panel visited in Europe. Comparisons are made between developments in Europe and the United States. Principal findings include: • European scientists and engineers see optoelectronics and high-power, high-frequency electronics as the major application opportunities for wide bandgap semiconductors.• The size of the GaN and SiC technology and device development effort in Europe is comparable with that in the United Statews.• Europe is ahead of the U.S. in in bulk GaN growth technology.• The United States is currently ahead in GaN-based device developments for light emitters, and high-power/high-frequency applications.• In silicon carbide technology, the U.S. is ahead in SiC bulk crystal and epitaxial production.• In R&D silicon carbide effort, European organization both academic and industrial have recently demonstrated outstanding results in both material growth (bulk and epi) and device development proving the leading position in the world; in the area ...

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“…This idea has developed to the power MOSFET [9], [10] utilizing the accumulation layer instead of the inversion layer.…”

Section: Introductionmentioning

confidence: 99%

Counter-doped MOSFETs of 4H-SiC

Ueno

Oikawa

1999

IEEE Electron Device Lett.

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In this paper, we investigate the effect of counterdoping of nitrogen at the channel region of epitaxial n-channel 4H-SiC MOSFET's on the channel mobility and the threshold voltage. From this study, we have found that the channel mobility steeply improves as the nitrogen dose increases. At a dose of 2 2 or 2.5 2 10 12 cm 02 the enhancement MOSFET has achieved an effective channel mobility of 20 cm 2 /Vs or a field effect mobility of 38 cm 2 /Vs at a peak.

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The planar 6H-SiC ACCUFET: a new high-voltage power MOSFET structure

Cited by 95 publications

References 9 publications

Electric characteristics of normally-off type 5 kV class 4H-SiC JFET, "SEJEET"

Electric characteristics of normally-off type 5 kV class 4H-SiC JFET, "SEJEET"

High-Temperature Electronics in Europe

Counter-doped MOSFETs of 4H-SiC

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