We report observations on polarization behavior of Raman signals from Si(100), Si(110) and Si(111) wafers depending on the orientation of in-plane probing light, in very high spectral resolution Raman measurements. Bare Si wafers were measured at the center of wafers, at 5 • increments of wafer rotation, using a polychromator-based multiwavelength Raman system under 457.9, 488.0 and 514.5 nm excitation. Four-fold, two-fold and three-fold symmetrical oscillations of Raman intensity, shift and full-width-at-halfmaximum (FWHM) were observed on Si(100), Si(110) and Si (111) This paper deals with understanding Raman Spectroscopy and its application to various crystal orientations ( (100), (110) and (111)) of Si wafers for highly accurate measurements. Micro-Raman spectroscopy has been introduced as an optical characterization technique for various semiconductor materials.1-6 Crystal structure, chemical composition and crystal orientation can be identified by a number of characteristics of the Raman peaks; their positions, intensity ratios, and their symmetry. The effect on Raman peaks of carrier concentration, impurity content, temperature and mechanical strain were studied extensively. As stress and strain engineering become an important part of advanced device design and manufacturing of high performance nanometer scale devices, unique non-destructive material characterization capabilities of micro-Raman spectroscopy in sub-micron applications, have been revisited in the last few years.
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