The Possibility of Resonance Transmission of Electrons in Crystals Through a System of Barriers

Iogansen, L. V.

doi:10.1142/9789814503464_0093

Cited by 11 publications

(8 citation statements)

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“…The probability of electron tunnelling through the DBQW is defined by the transmission coefficient T dbqw : at the resonant condition, T dbqw ≈ T 1 T 2 ∼ 1, whereas T dbqw ∼ 0 otherwise, where T 1 and T 2 are the transmission coefficients associated with the first and second barrier, respectively. The resonant condition is met when the electrons entering the DBQW region from the emitter conduction band have energy equal to one of the allowed QW energy levels [78]. Thus, as the electron transmission coefficient changes with the applied bias voltage, the device static IV characteristic exhibits a NDR [79].…”

Section: Ndrmentioning

confidence: 99%

Resonant Tunneling Diodes High-Speed Terahertz Wireless Communications - A Review

Cimbri

Wang

Al-Khalidi

et al. 2022

IEEE Trans. THz Sci. Technol.

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Resonant tunnelling diode (RTD) technology is emerging as one of the promising semiconductor-based solidstate technologies for terahertz (THz) wireless communications. This paper provides a review of the state-of-the-art, with a focus on the THz RTD oscillator, which is the key component of RTDbased THz transmitters and coherent receivers. A brief summary on the device principle of operation, technology, modelling, as well as an overview of oscillator design and implementation approaches for THz emitters, is provided. A new insight to device evaluation and to the reported oscillator performance levels is also given, together with brief remarks on RTD-based THz detectors. Thereafter, an overview of the reported wireless links which utilise an RTD in either transmission or reception, or in both roles, is given. Highlight results include the record single-channel wireless data rate of 56 Gb/s employing an all RTD-based transceiver, which demonstrates the potential of the technology for future short-range communications. The paper concludes with a discussion of the current technical challenges and possible strategies for future progress.

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Section: Ndrmentioning

confidence: 99%

Resonant Tunneling Diodes High-Speed Terahertz Wireless Communications - A Review

Cimbri

Wang

Al-Khalidi

et al. 2022

IEEE Trans. THz Sci. Technol.

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“…A RTD is a 2D diode fabricated from a resonant tun- neling structure in which electrons are able to escape from quantum confinement by tunneling through barriers via resonant energy states [101,102]. As shown in Fig.…”

Section: Rtdmentioning

confidence: 99%

Quantum tunneling in two-dimensional van der Waals heterostructures and devices

et al. 2021

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Quantum tunneling with band-structure engineering has been feasibly developed for many applications in electrical, optoelectrical, and magnetic devices. It relies on layer-by-layer design and fabrication, which is an interdisciplinary research field covering material science and technology. Ever since the discovery of two-dimensional (2D) layered materials, tunneling devices based on 2D van der Waals (vdW) heterostructures have been extensively studied as potential next-generation devices. 2D materials are thin at the atomic scale and extremely flat without surface dangling bonds. Because of these unique characteristics, 2D vdW heterostructures offer superior tunneling performance that reaches the benchmark of traditional Si technology and possess additional ability to scale down device size. Here, we comprehensively review quantum tunneling in 2D vdW heterostructures, in addition to their unique mechanisms and applications. Moreover, we analyze the possibilities and challenges currently faced by 2D tunneling devices and provide a perspective on their exploitation for advanced future applications. The investigation of technology-and performancecontrol of 2D tunneling devices is at their beginning stages; however, these devices should emerge as competitive candidates for realizing low-power supply, fast-speed capability, and high-frequency operating devices.

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“…And all important physical phenomenons such as tunneling and scattering occur in this small active region in which a single quantum well bounded by barriers is contained. In addition, the physical effects of the RTD device [3, 16, 25] make it quite useful in a wide variety of applications such as a high‐frequency and low‐consumption oscillator or switch.…”

Section: Introductionmentioning

confidence: 99%

Efficient approximation algorithm for the Schrödinger–Possion system

He¹,

Wang

2020

Numerical Methods Partial

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In this article, we study an efficient approximation algorithm for the Schrödinger-Possion system arising in the resonant tunneling diode (RTD) structure. By following the classical Gummel iterative procedure, we first decouple this nonlinear system and prove the convergence of the iteration method. Then via introducing a novel spatial discrete method, we solve efficiently the decoupled Schrödinger and Possion equations with discontinuous coefficients on no-uniform meshes at each iterative step, respectively. Compared with the traditional ones, the algorithm considered here not only has a less restriction on the discrete mesh, but also is more accurate. Finally, some numerical experiments are shown to confirm the efficiency of the proposed algorithm.

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The Possibility of Resonance Transmission of Electrons in Crystals Through a System of Barriers

Cited by 11 publications

References 0 publications

Resonant Tunneling Diodes High-Speed Terahertz Wireless Communications - A Review

Resonant Tunneling Diodes High-Speed Terahertz Wireless Communications - A Review

Quantum tunneling in two-dimensional van der Waals heterostructures and devices

Efficient approximation algorithm for the Schrödinger–Possion system

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