The potential of fast high voltage SiC diodes

Mitlehner, H.; Bartsch, W.; Bruckmann, M.; Dohnke, Karl Otto; Weinert, Ulrich

doi:10.1109/ispsd.1997.601461

Cited by 20 publications

(8 citation statements)

References 4 publications

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“…26 This thin interfacial layer model has been successfully utilized earlier to explain the high leakage current in SiC Schottky barrier diodes. 27,28 At a reverse bias of 100 V, a reverse current density of 3.5 × 10 -3 , 2.2 × 10 -3 , 1.0 × 10 -4 , and 2.5 × 10 -6 A/cm 2 was observed for the control, the CF 4 /O 2 , the CHF 3 /O 2 , and the CHF 3 /CF 4 devices, respectively. The reverse leakage current is highest for the control and improves significantly for both CHF 3 /O 2 and CHF 3 /CF 4 etched diodes as shown in Fig.…”

Section: Reverse Characteristicsmentioning

confidence: 96%

Effect of reactive ion etch-induced damage on the performance of 4H-SiC schottky barrier diodes

Khemka

Chow

Gutmann

1998

Journal of Elec Materi

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The effect of reactive ion etch (RIE) induced damage on 4H-SiC surfaces etched in fluorinated plasmas has been investigated and characterized using Ni Schottky diodes and x-ray photoelectron spectroscopic surface analysis. The diodes were characterized using current-voltage, current-voltage-temperature, and capacitance-voltage measurements with near ideal forward characteristics (n = 1.07) and forward current density as high as 9000 A/cm 2 from the control (unetched) devices. High current handling capability was observed in diodes with etched surfaces as well. Diodes with surfaces etched in CHF 3 containing plasmas showed a significant reduction in the barrier height compared to the diodes with surfaces etched in CF 4 containing plasma. Control devices exhibited high leakages when reverse biased, which is attributed to the presence of a thin (~2 nm) oxide layer at the metal-semiconductor interface. However, under reverse bias diodes with CHF 3 -etched surfaces showed improvement in leakage current compared to diodes with CF 4 -etched surfaces and the control diodes.

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Section: Reverse Characteristicsmentioning

confidence: 96%

Effect of reactive ion etch-induced damage on the performance of 4H-SiC schottky barrier diodes

Khemka

Chow

Gutmann

1998

Journal of Elec Materi

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“…Moreover, the thicker the drift layer is, the longer time it must have been exposed to high temperature in HTCVD for when fabricating the original wafer, which lead to larger defects density. To verify the above formula, the trap densities calculated by above formula were applied to diodes reported in [14][15][16][17][18] in simulation and the results of breakdown voltages are compared to reported ones shown in Table II.…”

Section: Simulation Results and Discussionmentioning

confidence: 99%

Realistic Simulation of Reverse Characteristics of 411-SiC Power Diode

Wei

Liang

Samudra

2007

2007 International Conference on Power Engineering, Energy and Electrical Drives

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This paper presents a methodology to simulate the reverse characteristics of realistic 4H-SiC pn junctions. The physical bases behind methodology of the simulation have been analyzed. The extensive collection of reported 4H-SiC pn junction diode data formed the basis of calibration of SYNOPSYS MEDICI for 4H-SiC pn junction simulation.Relevant parameters in the trap and photogeneration models are modified for realistic simulations. Motivation and justification of the modifications are presented. A universally applicable model parameter set for simulation of the reverse characteristics of practical 4H-SiC pn junction is proposed and verified against reported independent data not needed in the calibration step.

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“…3(a)). The used SiC SBD performs almost like an ideal diode, because of the low junction capacitance and its unipolar behavior [25], [26]. Adding additional discrete capacitances C add in parallel to each SiC SBD on the secondary side allows estimating the equivalent capacitance value for the different used Si and widebandgap semiconductors.…”

Section: Measurements Of the Influence Of The Rectifier Diodes Jumentioning

confidence: 99%

Influence of the junction capacitance of the secondary rectifier diodes on output characteristics in multi-resonant converters

Ditze

Heckel

März

2016

2016 IEEE Applied Power Electronics Conference and Exposition (APEC)

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Multi-resonant converters like the CLLLC topology are known for their outstanding efficiency and high power density. Little information has however been published about the influences of secondary side diode junction capacitances on the output characteristics of the resonant converter. This paper presents a detailed analysis of these influences in the inductive working range and reviews practical design considerations of the converter. Therefore, experimental results of an inductive power transfer system, using a CLLLC resonant topology, are compared to theoretical time domain solution, showing significant effects of different semiconductor materials and devices on output power. These effects will be discussed and explained in detail by using measured key waveforms

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The potential of fast high voltage SiC diodes

Cited by 20 publications

References 4 publications

Effect of reactive ion etch-induced damage on the performance of 4H-SiC schottky barrier diodes

Effect of reactive ion etch-induced damage on the performance of 4H-SiC schottky barrier diodes

Realistic Simulation of Reverse Characteristics of 411-SiC Power Diode

Influence of the junction capacitance of the secondary rectifier diodes on output characteristics in multi-resonant converters

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