The Preparation and Properties of Tin Oxide Films Formed by Oxidation of Tetramethyltin

Abstract

A new technique is described for the deposition of SnO2 films based upon the pyrolysis of tetramethyltin (TMT) in oxygen at relatively low temperatures (~450~ As a tin source, TMT has the advantages of being stable in air and moisture and of being a liquid with a relatively high vapor pressure at room temperature. Thus, a simple bubbler system is used to transport its vapors to the reaction chamber. The deposition technique is characterized by (i) high and controllable growth rates (more than 300 A/min), (it) high conductivity layers [more than 30(ohm-cm) -1 undoped], and (iii) highly transparent layers in the visible range (more than 95% transmission for 1500A layers). ,In addition, the films can be doped to achieve conductivities as high as 200 (ohm-cm) -1 without loss in transmission. Finally, fast, low temperature anneals with forming gas in an open-tube system can be effectively used to result in an additional twofold increase in conductivity.) unless CC License in place (see abstract). ecsdl.org/site/terms_use address. Redistribution subject to ECS terms of use (see 134.129.120.3 Downloaded on 2015-06-04 to IP

Fundamentals of Power Semiconductor Devices

“…My involvement with power semiconductor devices began in 1974 when I was hired by the General Electric Company at their corporate research and development center to start a new group to work on this technology. At that time, I had just completed my Ph.D. degree at Rensselaer Polytechnic Institute by performing research on a novel method for the growth of epitaxial layers of compound semiconductors [1][2][3][4]. Although I wanted to continue to explore this approach after joining the semiconductor industry, I was unable to secure a position at any of the major research laboratories due to a lack of interest in this unproven growth technology.…”

Electrical and optical properties of tin oxide films doped with F and (Sb+F)

“…[1][2][3][4][5][6][7][8][9][10] It has been established that F-doped tin oxide films [1][2][3][4][5][6] have higher conductivity, optical transmission, and infrared reflection than the tin oxide films prepared with other dopants. It is weII known that the conductivity of these films can be enhanced by appropriate doping.…”

Chemical vapour deposition of tin oxide films and their electrical properties

“…In CVD, hydrolysis of SnC14 is carried out. The oxidation of organometallic tin compounds to obtain SnO2 films has been tried by various workers (Kane et al1975, Baliga andGhandhi 1976). In the evaporation methods either tin is evaporated and later oxidised (Nishino and Hamakawa 1970) or SnOz is evaporated using the electron beam technique (Franz et al 1977).…”