The preparation and the electrical and optical properties of SnS crystals

Albers, W.; Haas, C.; Maesen, F. Van Der

doi:10.1016/0022-3697(60)90253-5

Cited by 117 publications

(71 citation statements)

References 11 publications

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“…SnS is layered anisotropic material with double layer of Sn and S perpendicular to the c-axis. The bonding between these layers is much weaker as shown by larger inter-atomic distances and by a (0 0 1) cleavage plane [26]. This provides the possibility of the growth into one-dimensional crystals under the appropriate thermodynamic conditions.…”

Section: Resultsmentioning

confidence: 99%

Thioglycolic acid (TGA) assisted hydrothermal synthesis of SnS nanorods and nanosheets

Biswas

Kar

Chaudhuri

2007

Applied Surface Science

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Section: Resultsmentioning

confidence: 99%

Thioglycolic acid (TGA) assisted hydrothermal synthesis of SnS nanorods and nanosheets

Biswas

Kar

Chaudhuri

2007

Applied Surface Science

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“…Thus, the indirect bandgap of SnS is 0.982 eV which is comparable with the experimental results. 26,38,39 By replacing a Sn atom with a Cu atom, the indirect bandgap decreased to 0.864 eV as shown in Fig. 1(b).…”

Section: Energy Band Simulationmentioning

confidence: 93%

Molecular beam epitaxy growth of high quality p-doped SnS van der Waals epitaxy on a graphene buffer layer

Wang¹,

Leung²,

Fong³

et al. 2012

Journal of Applied Physics

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We report on the systematic investigation of optoelectronic properties of tin (IV) sulfide (SnS) van der Waals epitaxies (vdWEs) grown by molecular beam epitaxy (MBE) technique. Energy band simulation using commercial CASTEP code indicates that SnS has an indirect bandgap of size 0.982 eV. Furthermore, our simulation shows that elemental Cu can be used as a p-type dopant for the material. Growth of high quality SnS thin films is accomplished by MBE technique using graphene as the buffer layer. We observed significant reduction in the rocking curve FWHM over the existing published values. Crystallite size in the range of 2–3 μm is observed which is also significantly better than the existing results. Measurement of the absorption coefficient, α, is performed using a Hitachi U-4100 Spectrophotometer system which demonstrate large values of α of the order of 104 cm−1. Sharp cutoff in the values of α, as a function of energy, is observed for the films grown using a graphene buffer layer indicating low concentration of localized states in the bandgap. Cu-doping is achieved by co-evaporation technique. It is demonstrated that the hole concentration of the films can be controlled between 1016 cm−3 and 5 × 1017cm−3 by varying the temperature of the Cu K-cell. Hole mobility as high as 81 cm2V−1s−1 is observed for SnS films on graphene/GaAs(100) substrates. The improvements in the physical properties of the films are attributed to the unique layered structure and chemically saturated bonds at the surface for both SnS and the graphene buffer layer. Consequently, the interaction between the SnS thin films and the graphene buffer layer is dominated by van der Waals force and structural defects at the interface, such as dangling bonds or dislocations, are substantially reduced.

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“…[44] The smallest energy gap is, however, reported to be an indirect transition at 1.07 eV. [45] Makinistian and Albanesi employed an ab initio density-functional theory with a FP-LAPW method to calculate the electronic band structure and the optical spectra of SnS. They reported that although SnS has an isotropic indirect energy band gap at 1.16 eV, the absorption coefficients along three principal crystallographic axes are highly anisotropic; [46] the absorption coefficient along the c axis has a sharp increase from 10 1 to 10 4 cm -1 at 1.21 eV.…”

Section: Optical Propertiesmentioning

confidence: 99%