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BaTiO 3 (BTO)/SrTiO3 (STO), and BaTiO3/BaZrO3 (BZO) artificial superlattices were fabricated by the molecular beam epitaxy process and their dielectric properties and refractive indices were measured. Superlattices formed on Nb-doped STO substrates showed large leakage currents in comparison with those on pure STO substrates. This indicated that Nb-doped substrates were not suitable for bottom electrodes in dielectric measurements. Dielectric properties were therefore measured for films on pure STO substrates using planar interdigital electrodes. Superlattice films were so thin (32 nm) that fine planer electrodes were necessary to reduce the penetration of electric flux into the substrate. Interdigital electrodes with the interdigital width of 5 μm were formed by electron beam lithography. Dielectric permittivity of superlattices was determined from admittance data using an electromagnetic field analysis. It was found that the dielectric permittivities of [(BTO)10/(STO)10]4 and [(BTO)10/(BZO)10]4 were εr=720 000 and εr=330 000, respectively. A large Debye type dielectric dispersion was observed in the [(BTO)10/(BZO)10]4 superlattice. The refractive index of the superlattices was measured by spectroscopic ellipsometry. It was found that the refractive index of the superlattices changed with their structures and those of [(BTO)10/(STO)10]4 and [(BTO)10/(BZO)10]4 superlattices were larger than other superlattices. This indicated that the superlattice structure affected not only on the ionic polarization but also the electronic structure or chemical bonding nature of the superlattices.
BaTiO 3 (BTO)/SrTiO3 (STO), and BaTiO3/BaZrO3 (BZO) artificial superlattices were fabricated by the molecular beam epitaxy process and their dielectric properties and refractive indices were measured. Superlattices formed on Nb-doped STO substrates showed large leakage currents in comparison with those on pure STO substrates. This indicated that Nb-doped substrates were not suitable for bottom electrodes in dielectric measurements. Dielectric properties were therefore measured for films on pure STO substrates using planar interdigital electrodes. Superlattice films were so thin (32 nm) that fine planer electrodes were necessary to reduce the penetration of electric flux into the substrate. Interdigital electrodes with the interdigital width of 5 μm were formed by electron beam lithography. Dielectric permittivity of superlattices was determined from admittance data using an electromagnetic field analysis. It was found that the dielectric permittivities of [(BTO)10/(STO)10]4 and [(BTO)10/(BZO)10]4 were εr=720 000 and εr=330 000, respectively. A large Debye type dielectric dispersion was observed in the [(BTO)10/(BZO)10]4 superlattice. The refractive index of the superlattices was measured by spectroscopic ellipsometry. It was found that the refractive index of the superlattices changed with their structures and those of [(BTO)10/(STO)10]4 and [(BTO)10/(BZO)10]4 superlattices were larger than other superlattices. This indicated that the superlattice structure affected not only on the ionic polarization but also the electronic structure or chemical bonding nature of the superlattices.
Epitaxial growth of BaTiO3, SrTiO3 and their superlattices was carried out by the alternating evaporation method using an atomic-layer-epitaxy control system for molecular beam epitaxy (MBE). Stable and reproducible control of the chemical composition was achieved by layer-by-layer growth with this system. Both BaTiO3 and SrTiO3 were grown epitaxially on SrTiO3 substrates, and clear oscillations of reflection high-energy electron diffraction (RHEED) intensity were observed, corresponding to the alternating depositions of BaO and TiO2 in BaTiO3 growth. The artificial superlattice with the structure of [(BaTiO3)5/(SrTiO3)5]7 was fabricated, and the X-ray diffraction (XRD) pattern of the superlattice was simulated by a step model. Diffraction angles of satellite peaks and the shape of Laue peaks in XRD patterns were consistent with those calculated, indicating that the designed structure was fabricated in the superlattice.
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