The process variability of a V-band LC-VCO in 65nm SOI CMOS

Kim, D.D.; Kim, Jonghae; Cho, Choongyeun

doi:10.1109/rfic.2008.4561401

Cited by 2 publications

(1 citation statement)

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“…A quarter-wave (k/4)-length inductive choke in a microstrip line structure is needed for the output to prevent the second harmonic signal from leaking through to the DC supply and to decrease the power loss of the measured signal at the output terminal [1]. Furthermore, tolerance design is the primary requisite consideration in MMW VCOs because the oscillator circuits are sensitive to process variations [10].…”

Section: Introductionmentioning

confidence: 99%

A 54-GHz push-push VCO with wide tuning range in 0.18-μm CMOS technology

Huang

You

Huang

2010

Microw. Opt. Technol. Lett.

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The design of a V-band 54-GHz push-push voltagecontrolled oscillator (VCO) with a wide tuning range is presented in this article. The circuit is fabricated using 0.18-lm CMOS technology. A new single-turn inductor structure with a smaller inductance, which can reduce the substrate loss, is adopted for the oscillator core to have the performances of low phase noise and a wide tuning range. Besides, a new technique that delivers the output signal from the common drain of the two-stage buffers has been proposed to enhance the output power. The VCO core dissipates 8.54 mW from a 2 V supply. The buffer stage consumes 10.11 mW for raising the measured output power level up to À25 dBm. The measured output phase noise at an offset of 1 MHz from the carrier frequency of 53.0 GHz is about À94.45 dBc/Hz. This VCO, with a tuning range of 2.68 GHz (4.9%), shows the tuning-related figure-of-merit FOM T of À170.12 dB.

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Section: Introductionmentioning

confidence: 99%