The Properties of Laser Annealed Dielectric Films

Stewart, AF; Guenther, Arthur H.; Domann, FE

doi:10.1520/stp24446s

Cited by 5 publications

(1 citation statement)

References 12 publications

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“…Laser annealing mechanism thinks that laser pulse can cause microstructure to reform from amorphous to crystal. Eliminating electronic defects mechanism thinks that laser pulse can eliminate impurity energy level in forbidden band and initial seed electrons in conductive band [3][4][5][6][7][8][9][10]. In this paper, we have investigated the influence of pretreatment laser energy density on laser induced damage probability.…”

Section: Introductionmentioning

confidence: 99%

Experimental Investigation on Laser Pretreatment of Optical Films

Xia

2011

AMR

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Optical films have been prepared on K9 glass by electronic beam evaporation. Parameters of S-polarized Nd: YAG laser used for pretreatment and damage tests are: wavelength is 355nm, pulse width is 8ns, and incidence angle is 33.75 degree. The results reflect that: the influence of laser pretreatment on laser induced damage threshold of films is uncertain. Laser pretreatment not always improve the laser induced damage threshold of films, and sometimes it will cause negative influence. As for damage probability, for a certain testing energy density, there is an energy density scope, pretreatment pulse with energy density in which can reduce the laser induced damage probability of films. The energy density of laser pretreatment pulse should be selected according to the serving conditions of films.

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Section: Introductionmentioning

confidence: 99%

Experimental Investigation on Laser Pretreatment of Optical Films

Xia

2011

AMR

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Laser conditioning of optical coatings: some issues in the characterization by atomic force microscopy

Fornier¹,

Cordillot²,

Ausserré

et al. 1994

Laser-Induced Damage in Optical Materials: 1993

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We have studied the changes of dielectric optical coatings after laser conditioning using atomic force microscopy (AFM). Laser conditioning is the process which consists of illuminating a film by a laser below damage threshold in order to increase this threshold value. This method is implemented for optics used in high fluence laser beam such as Nd-glass lasers (1064 nm, 3 ns pulse length). We have studied e-beam evaporation deposited highly reflective multilayer Zr02/5i02 mirrors, and also single layers of 5i02, Hf02 and Zr02.We have observed the modification of the surface after laser conditioning using the AFM. We find that this process results in localized minimization or elimination of defects (nodules, craters etc...). Furthermore, the origin of the increase in the size of the hillocks observed after laser conditioning and previously reported by other groups, has been experimentally identified as an instrumental artifact.One major mechanism supposed to be responsible for laser conditioning effects consists of "laser cleaning" for which absorbing contaminants (especially water) are desorbed before damage occurs5. O-8194-1407-7194/$6.OO SPIE Vol. 2114/355 Downloaded From: http://proceedings.spiedigitallibrary.org/ on 06/25/2016 Terms of Use: http://spiedigitallibrary.org/ss/TermsOfUse.aspx

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Laser Conditioning and Electronic Defects of HfO2 and SiO2 Thin Films

Kozlowski¹,

Staggs²,

Rainer³

et al. 1991

Laser-Induced Damage in Optical Materials: 1990

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Multilayer HfO2/SiO2 high reflectors (HR) and polarizers show a permanent increase in their 1064-nm damage thresholds following laser conditioning at subthreshold fluences. Threshold increases of 2–3x are typical. In an effort to better understand the conditioning effect we have made laser conditioning and electronic property measurements on single layers of these two materials. The laser damage threshold of 1-μm thick e-beam deposited SiO2 was increased by laser conditioning for wavelengths ranging from 355 to 1064 nm. The damage threshold of HfO2 single layers was not influenced by sub-threshold illumination. As-deposited thin films of a-SiO2 are known to contain paramagnetic electronic defects. We have used electron paramagnetic resonance (EPR) to study the concentrations and types of defects present in single layer and multilayer films of HfO2 and SiO2. E' and oxygen hole centers with concentrations on the order of 1017/cm3 have been measured in the SiO2 layers. A previously unreported defect has been observed for HfO2. The concentration of defects was studied both before and after laser conditioning and damage with 1064-nm photons. These electronic structure measurements are discussed in relation to an electronic defect model for laser conditioning of dielectric multilayers.

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The Properties of Laser Annealed Dielectric Films

Cited by 5 publications

References 12 publications

Experimental Investigation on Laser Pretreatment of Optical Films

Experimental Investigation on Laser Pretreatment of Optical Films

Laser conditioning of optical coatings: some issues in the characterization by atomic force microscopy

Laser Conditioning and Electronic Defects of HfO2 and SiO2 Thin Films

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