The properties of reactively-sputtered, stoichiometry-controlled and optimum-conductivity transparent indium oxide films as a function of their titanium, aluminium and zinc content; comparisons with the use of tin as a dopant

Safi, I.; Howson, R.P.

doi:10.1016/s0040-6090(98)01625-3

Cited by 15 publications

(6 citation statements)

References 4 publications

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“…Another high mobility TCO is titanium-doped In 2 O 3 (ITiO). 25,213,214 ITiO films (1-3 at% Ti) sputtered by van Hest et al showed high conductivity (6300 S cm À1 ) and high mobility (>80 cm 2 (V s) À1 ) with >85% transmittance. 213 Films deposited by PLD exhibited mobilities up to 199 cm 2 (V s) À1 with very high conductivities (10 200 S cm À1 ).…”

Section: Sno 2 :(Fsbmentioning

confidence: 99%

Solution processing of transparent conductors: from flask to film

2011

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This critical review focuses on the solution deposition of transparent conductors with a particular focus on transparent conducting oxide (TCO) thin-films. TCOs play a critical role in many current and emerging opto-electronic devices due to their unique combination of electronic conductivity and transparency in the visible region of the spectrum. Atmospheric-pressure solution processing is an attractive alternative to conventional vacuum-based deposition methods due to its ease of fabrication, scalability, and potential to lower device manufacturing costs. An introduction into the applications of and material criteria for TCOs will be presented first, followed by a discussion of solution routes to these systems. Recent studies in the field will be reviewed according to their materials system. Finally, the challenges and opportunities for further enabling research will be discussed in terms of emerging oxide systems and non-oxide based transparent conductors (341 references).

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Section: Sno 2 :(Fsbmentioning

confidence: 99%

Solution processing of transparent conductors: from flask to film

2011

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“…In fact, the technically interesting ITO is produced by doping indium oxide with Sn, which acts as an electrondonor, similar to Zr and Al [19,20]; adding Al increases the conductivity of In 2 O 3 . The SIMS measurements gave no evidence of neither Sn nor Zr in the samples, but of Al and K at the 111 In implantation depth (see Figure 2).…”

Section: Resultsmentioning

confidence: 99%

Electronic Relaxation in Indium Oxide Films Studied with Perturbed Angular Correlations

et al. 2005

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The electronic relaxation due to the 111 In Y 111 Cd electron capture process was studied by measuring perturbed gg-angular correlations after 111 In-ion implantation into indium oxide films of various compositions and thicknesses and deposited on different substrates. X-ray diffraction, Rutherford backscattering and secondary ion mass spectrometry were used to characterize the microstructure and composition of the samples. The film thickness and type of substrate were found to have much less influence on the after effect than the deposition parameters and impurities.

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“…DC, pulsed magnetron sputtering (PMS), high power pulsed magnetron sputtering (HIPIMS) and modulated pulsed power magnetron sputtering (MPP)) [2][3][4][5] ; the anode-cathode geometry 6,7 ; the magnetic field configuration [8][9][10] , and the substrate bias 11,12 . These variables are not independent and it is difficult to do a correlation between them 2,13 .…”

Section: Introductionmentioning

confidence: 99%

Pulsed bias effect on crystallinity and nano-roughness of Ti6Al4V-N films deposited by grid assisted magnetron sputtering system

et al. 2014

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This paper reports the effect of pulsed bias in comparison with DC bias on reactive deposition of Ti6Al4V-N films, obtained by Grid Assisted Magnetron Sputtering. The results obtained by X-Ray diffraction (XRD), Energy Dispersive X-ray Fluorescence Spectrometer (EDX) and Atomic Force Microscopy (AFM) show that bias condition affects the crystalline texture and change the roughness and morphology of the films. The DC bias favors the film crystallinity, however the pulsed bias produces smoother films.

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The properties of reactively-sputtered, stoichiometry-controlled and optimum-conductivity transparent indium oxide films as a function of their titanium, aluminium and zinc content; comparisons with the use of tin as a dopant

Cited by 15 publications

References 4 publications

Solution processing of transparent conductors: from flask to film

Solution processing of transparent conductors: from flask to film

Electronic Relaxation in Indium Oxide Films Studied with Perturbed Angular Correlations

Pulsed bias effect on crystallinity and nano-roughness of Ti6Al4V-N films deposited by grid assisted magnetron sputtering system

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