The Pulsed MIS Capacitor. A Critical Review

Abstract

Contents 1. bitroduction 2. Space-charge and quasi-neutral region generation 3. Theory of the non-equilibrium MOS capacitor 4 . Pulsed techniques 4.1 Zerbst method [4] 4.2 Heiman method [6] 4.3 Huang method [lo] 4.4 Calzolari current/capacitance transient method [14, 151 4.5 Trullemans and van de Wiele method [31] 4.6 Kano method [16] 4.7 Rabbani method [21] 5. Voltage sweep techniques 5.1 Pierret method [12, 131 5.2 Gorban method [17] 5.3 Taniguchi method [lS] 5.4 Lin method [22] 5.5 Kaplan method [20] 5.6 Tiwari method [23] 5.7 Kuper and Grimbergen method [33] 6. Charge measurement 6.1 Hofstein method [5] 6.2 Viswanathan method [37] 7 . Discussion References

The impact of negative-bias-temperature-instability on the carrier generation lifetime of metal-oxynitride-silicon capacitors

“…It is associated with the time required for the MIS capacitor to switch from deep depletion ͑nonequilibrium state͒ to inversion ͑equilibrium state͒ by thermal generation of electron-hole ͑e-h͒ pairs. A route, though not often the preferred one among many others, 17 to conduct carrier generation lifetime studies on the MIS capacitor is by means of the inversion layer-related DLTS technique 18,19 which was originally developed by Pearce et al 18 as a special case of the conventional DLTS technique conceived by Lang 20 more than 30 years ago.…”

Tungsten polyoxometalate molecules as active nodes for dynamic carrier exchange in hybrid molecular/semiconductor capacitors

“…This is known as a Zerbst plot. 29,[41][42][43] The Heiman plot, 43 which is a representation based on the integrated form of the Zerbst equation, takes into account only bulk space-charge region (scr) generation mechanisms and will be used here for the extraction of s g to avoid the noise magnification, intrinsic in the Zerbst method.…”

Physical understanding and technological control of carrier lifetimes in semiconductor materials and devices: A critique of conceptual development, state of the art and applications

“…Pulsing the MOS capacitor into deep depletion, the capacitance-time (C-t) curve is recorded [104][105][106][107][108][109][110][111][112][113][114]. The capacitance relaxation is governed by thermal generation of electron-hole pairs.…”