The quality improvement of PI coating process of TFT-LCD panels with Taguchi methods

Lin, Chern‐Sheng; Shih, Shun-Jen; Lu, An-Tsung; Hung, San-Shan; Chiu, Chuang-Chien

doi:10.1016/j.ijleo.2011.06.028

Cited by 17 publications

(7 citation statements)

References 12 publications

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“…In order to save experimental costs, this work used the Taguchi orthogonal design method to create an L18 orthogonal array experiment [ 26 , 27 ] with 3 parameter elements, one at six levels and two at three levels, as shown in Table 1 with their corresponding peak value and τ 2 .…”

Section: Resultsmentioning

confidence: 99%

Amorphous NdIZO Thin Film Transistors with Contact-Resistance-Adjustable Cu S/D Electrodes

Zhang

et al. 2021

Membranes

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High-performance amorphous oxide semiconductor thin film transistors (AOS-TFT) with copper (Cu) electrodes are of great significance for next-generation large-size, high-refresh rate and high-resolution panel display technology. In this work, using rare earth dopant, neodymium-doped indium-zinc-oxide (NdIZO) film was optimized as the active layer of TFT with Cu source and drain (S/D) electrodes. Under the guidance of the Taguchi orthogonal design method from Minitab software, the semiconductor characteristics were evaluated by microwave photoconductivity decay (μ-PCD) measurement. The results show that moderate oxygen concentration (~5%), low sputtering pressure (≤5 mTorr) and annealing temperature (≤300 °C) are conducive to reducing the shallow localized states of NdIZO film. The optimized annealing temperature of this device configuration is as low as 250 °C, and the contact resistance (RC) is modulated by gate voltage (VG) instead of a constant value when annealed at 300 °C. It is believed that the adjustable RC with VG is the key to keeping both high mobility and compensation of the threshold voltage (Vth). The optimal device performance was obtained at 250 °C with an Ion/Ioff ratio of 2.89 × 107, a saturation mobility (μsat) of 24.48 cm2/(V·s) and Vth of 2.32 V.

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Section: Resultsmentioning

confidence: 99%

Amorphous NdIZO Thin Film Transistors with Contact-Resistance-Adjustable Cu S/D Electrodes

Zhang

et al. 2021

Membranes

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“…Three factors a ecting the contact area of the Pressure Sensitive Adhesive (PSA) are time, temperature, and pressure, which are the autoclave process parameters. Lin et al obtained the optimal process conditions with the Taguchi methods, in order that alignment lm printing can achieve the best product quality at the lowest cost [23]. Lakshminarayanan & Balasubramanian determined the optimum levels of process parameters using the Taguchi method to nd the signi cant parameters in deciding the main process [24].…”

Section: Experimental Data and Resultsmentioning

confidence: 99%

Improvement of TFT-LCD's polarizer plate bubble problem using a preheating-process

Lin

Huang

et al. 2016

Scientia Iranica

Self Cite

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In this study, improvement of the polarizer plate bubble in the thin lm transistor liquid crystal display process, especially where the polarizer plate is attached to the black matrix area at the end of the glass substrate, is presented. This study proposed temperature control functions during the attaching process using the preheating operations of pressure sensitive adhesives and a pre-existing warp polarizer plate. The polarizer plate is softened evenly, and, then, the bubbles can be discharged smoothly in the attaching process. Three main control factors are used in the polarizer plate attachment process, using an experimental design method, to determine the best combination of parameters. By applying optimal parameters in the experiments, bubble width can be decreased by 60.49%, compared with that of the previous process.

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“…Optimal parameters analysis by Taguchi method. Taguchi method developed by Dr. Taguchi in 1990 41 focused on division of in uencing factors to carry out the optimal factors of a process 42,43 , and Taguchi method was properly applied to analyze the in uence of factors. This study adopted four factors such as ratio of PI and PES, ow rate, applied voltage, and spinning time at three various levels to obtain the optimal factors for nano brous formation.…”

Section: Experiments and Methodologymentioning

confidence: 99%

Preparation of Polyimide/Polyethersulfone high temperature resistant nano-fibers for removal of particulate matter

Chen

Lai

2022

Preprint

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Taguchi method was used to determine factors influence, while four factors included ratio of PI and PES, flow rate, voltage, and spinning time, for testing filter efficiency of electrospinning fiber. Spinning time and flow rate were arranged as the top two influenced factors via Taguchi method in this study. Considering test of spinning time, spinning time of 20 min was defined as the best condition to generate the fibrous membrane with filter efficiency and quality of 99.54% and 5.56. Concerning test of flow rate, flow rate of 0.15 ml/hr was the best condition to form the fibrous membrane with filter efficiency and quality of 93.84% and 0.88. This study showed the best conditions of filter efficiency and quality that valued as 93.82% and 2.90 while the most optimal conditions presented ratio of PI and PES (50:50), flow rate (0.15 ml/hr), voltage (22.5 kV), and spinning time (20 mins).Thermogravimetry and differential scanning calorimetry were used to conduct thermal analysis of nano-fiber membrane, and results depicted decomposed temperature of PI and PES were above 500 and 400 ℃. Furthermore, temperature of hot gas filiation usually occurred at the temperature of above 260 ℃, such as 200–350 ℃ for waste incineration, 150–300 ℃ for concrete producing, 130–150 ℃ for thermal power plant operation, and 171–210 ℃ for crematorium operation, so the PI/PES acquired potential advantage on application of hot gas filiation because PI/PES membrane required not only high temperature resistance but also high filter efficiency and quality.

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The quality improvement of PI coating process of TFT-LCD panels with Taguchi methods

Cited by 17 publications

References 12 publications

Amorphous NdIZO Thin Film Transistors with Contact-Resistance-Adjustable Cu S/D Electrodes

Amorphous NdIZO Thin Film Transistors with Contact-Resistance-Adjustable Cu S/D Electrodes

Improvement of TFT-LCD's polarizer plate bubble problem using a preheating-process

Preparation of Polyimide/Polyethersulfone high temperature resistant nano-fibers for removal of particulate matter

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