The recrystalization of BF2+-implanted silicon by light-flash annealing

Leu, Juh-Tzeng; Chen, Lih‐Juann; Lu, Learong

doi:10.1016/0038-1101(82)90056-9

Solid-State Electronics

1982

DOI: 10.1016/0038-1101(82)90056-9

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The recrystalization of BF2+-implanted silicon by light-flash annealing

Juh-Tzeng Leu¹,

Lih‐Juann Chen²,

Learong Lu³

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1982

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Cited by 10 publications

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“…The deposition process is followed by a short flash pulse using a xenon lamp for fast annealing, a technique that is known from crystallization of amorphous silicon and activation of doping agents in bulk amorphous silicon [10][11][12][13]. The whole procedure is performed under ambient pressure (*1 bar) or moderate vacuum conditions (*10 -3 mbar).…”

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Polycrystalline silicon foils by flash lamp annealing of spray-coated silicon nanoparticle dispersions

et al. 2015

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A novel technique for the preparation of thin silicon foils (d & 10 lm) starting from silicon nanoparticle dispersions is reported. The basic steps are ultrasonic spray coating of mixtures of silicon nanoparticles and organosilicon compounds and subsequent flash lamp annealing (FLA). The organosilicon compounds are used to stabilize the silicon nanoparticles in dispersion. The FLA induces melting of the silicon nanoparticles which transform into polycrystalline silicon thin films. Parameter adjustment (e.g., pressure, flash duration, flash energy, and substrate temperature) allows for the preparation of thin films as well as free-standing and flexible silicon foils. If the sprayed film thickness reaches a critical value (d & 20 lm) and the FLA is performed under vacuum conditions (5 9 10 -3 mbar), then the film peels off from the molybdenum substrate. In a following step, the foil is flashed by FLA from the backside. This method targets thin silicon foils exhibiting thicknesses between 5 and 10 lm. The lateral size of silicon foils depends on the setup used. In this work, samples with a maximum area of approximately 5 9 5 cm 2 were produced. The silicon foils were investigated by scanning electron microscopy and spectroscopic ellipsometry to determine thickness, surface structure, and the effective dielectric response. The compositions (Si, C, and O) and the bond characteristics of Si-O and Si-C were analyzed by means of energy dispersive

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Polycrystalline silicon foils by flash lamp annealing of spray-coated silicon nanoparticle dispersions

et al. 2015

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Annealing of ion-implanted GaAs by an intense short-pulse flash-tube

Lue

Lin

1986

J Mater Sci Lett

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Ultrasonic spray coating and flash lamp annealing of silicon nanoparticle dispersions for silicon thin film formation

et al. 2014

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The recrystalization of BF2+-implanted silicon by light-flash annealing

Cited by 10 publications

References 6 publications

Polycrystalline silicon foils by flash lamp annealing of spray-coated silicon nanoparticle dispersions

Polycrystalline silicon foils by flash lamp annealing of spray-coated silicon nanoparticle dispersions

Annealing of ion-implanted GaAs by an intense short-pulse flash-tube

Ultrasonic spray coating and flash lamp annealing of silicon nanoparticle dispersions for silicon thin film formation

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