The relationship between the dislocations and microstructure in In0.82Ga0.18As/InP heterostructures

Zhao, Liang; Guo, Zuoxing; Wei, Qiulin; Miao, Guoqing; Zhao, Lei

doi:10.1038/srep35139

Cited by 9 publications

(5 citation statements)

References 31 publications

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“…The obtained values of the dislocation density are presented in Table 1. The dislocation densities in different regions (at the interface and the surface), also calculated by the IFFT method [19], are given in Table 1.…”

Section: Resultsmentioning

confidence: 99%

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Effects of In0.82Ga0.18As/InP Double Buffers Design on the Microstructure of the In0.82G0.18As/InP Heterostructure

et al. 2017

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Abstract:In order to reduce the dislocation density and improve the performance of high indium content In 0.82 Ga 0.18 As films, the design of double buffer layers has been introduced into the In 0.82 Ga 0.18 As/InP heterostructure. Compared with other buffer layer structures, we introduce an InP thin layer, which is the same as the substrate, into the In 0.82 Ga 0.18 As/InP heterostructure. The epitaxial layers and buffer layers were grown by the low-pressure metalorganic chemical vapor deposition (LP-MOCVD) method. In this study, the surface morphology and microstructures of the heterostructure were investigated by SEM, AFM, XRD and TEM. The residual strains of the In 0.82 Ga 0.18 As epitaxial layer in different samples were studied by Raman spectroscopy. The residual strain of the In 0.82 Ga 0.18 As epitaxial layer was decreased by designing double buffer layers which included an InP layer; as a result, dislocations in the epitaxial layer were effectively suppressed since the dislocation density was notably reduced. Moreover, the performance of In 0.82 Ga 0.18 As films was investigated using the Hall test, and the results are in line with our expectations. By comparing different buffer layer structures, we explained the mechanism of dislocation density reduction by using double buffer layers, which included a thin InP layer.

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Section: Resultsmentioning

confidence: 99%

“…In a previous study, we discussed the relationship between dislocations and microstructure in In0.82Ga0.18As/InP heterostructures without a buffer layer [19]. In this experiment, to release the strain and obtain a better In In0.82Ga0.18As film, a thin In0.82Ga0.18As layer was employed as a buffer for InP-based In0.82Ga0.18As.…”

Section: Introductionmentioning

confidence: 99%

Effects of In0.82Ga0.18As/InP Double Buffers Design on the Microstructure of the In0.82G0.18As/InP Heterostructure

et al. 2017

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“…FG RAM is different from the previous memory devices. The charge could be stored in a floating gate layer [24][25][26]118] . The schematic of the FG RAM devices is shown in Fig.…”

Section: Floating Gate Random-access Memorymentioning

confidence: 99%

A revew of in situ transmission electron microscopy study on the switching mechanism and packaging reliability in non-volatile memory

et al. 2021

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Non-volatile memory (NVM) devices with non-volatility and low power consumption properties are important in the data storage field. The switching mechanism and packaging reliability issues in NVMs are of great research interest. The switching process in NVM devices accompanied by the evolution of microstructure and composition is fast and subtle. Transmission electron microscopy (TEM) with high spatial resolution and versatile external fields is widely used in analyzing the evolution of morphology, structures and chemical compositions at atomic scale. The various external stimuli, such as thermal, electrical, mechanical, optical and magnetic fields, provide a platform to probe and engineer NVM devices inside TEM in real-time. Such advanced technologies make it possible for an in situ and interactive manipulation of NVM devices without sacrificing the resolution. This technology facilitates the exploration of the intrinsic structure-switching mechanism of NVMs and the reliability issues in the memory package. In this review, the evolution of the functional layers in NVM devices characterized by the advanced in situ TEM technology is introduced, with intermetallic compounds forming and degradation process investigated. The principles and challenges of TEM technology on NVM device study are also discussed.

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“…Growth method Substrate TDD in In x Ga 1−x As (cm −2 ) Reference 0.68 MOCVD InP (0 0 1)~10 6 (XTEM) Ji et al [5] 0.82 MOCVD InP (0 0 1)~10 8 (XTEM) Zhao et al [6] 0.82 MOCVD InP (0 0 1)~10 11 -10 12 (XRD-FWHM) Zhao et al [7] 0.83 GSMBE InP (0 0 1) ≤10 7 (XTEM) Present work 0.53 SSMBE GaAs (0 0 1)~10 6 (XTEM) Lubyshev et al [8] 0.6 SSMBE GaAs (0 0 1)~10 8 (XTEM) Valtuefia et al [9] 0.75-1 SSMBE GaAs (0 0 1)~10 9 -10 10 (plan-view TEM) Chang et al [10] 1 SSMBE GaAs (0 0 1)~10 8 -10 9 (XTEM) Chang et al [11] 0.8 Not mentioned GaAs (0 0 1)~10 5 (EPD) Zimmermann et al [12] 0.63 SSMBE GaAs (0 0 1)~10 8 (XTEM) Song et al [13] 0.85 SSMBE GaAs (0 0 1) Not mentioned Jurczak et al [14] 0.83 GSMBE GaAs (0 0 1)~10 9 -10 10 been optimized to acquire high-performance InGaAs PDs with relatively high-lattice mismatch. Additionally, some strategies were used to reduce the residual strain and decrease the TDD, such as composition overshoot and the insertion of digital alloy (DA) intermediate layer in the MBL.…”

Section: Valuementioning

confidence: 99%

Epitaxy and Device Properties of InGaAs Photodetectors with Relatively High Lattice Mismatch

Chen¹,

Yuan²,

Zhang³

2018

Epitaxy

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co-workers develop an h-BN/MoTe 2 /graphene/SnS 2 /h-BN van der Waals heterostructure to realize an ultrahigh-sensitivity broadband (405-1550 nm) photodetector, due to its unique advantages for high-efficiency light absorption and exciton dissociation. Graphene plays a key role in enhancing the sensitivity and broadening the spectral range, providing a viable approach toward future ultrahigh sensitivity and broadband photodetectors.

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The relationship between the dislocations and microstructure in In0.82Ga0.18As/InP heterostructures

Cited by 9 publications

References 31 publications

Effects of In0.82Ga0.18As/InP Double Buffers Design on the Microstructure of the In0.82G0.18As/InP Heterostructure

Effects of In0.82Ga0.18As/InP Double Buffers Design on the Microstructure of the In0.82G0.18As/InP Heterostructure

A revew of in situ transmission electron microscopy study on the switching mechanism and packaging reliability in non-volatile memory

Epitaxy and Device Properties of InGaAs Photodetectors with Relatively High Lattice Mismatch

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