In this work, we propose a formation mechanism to explain the relationship between the surface morphology (and microstructure) and dislocations in the In0.82Ga0.18As/InP heterostructure. The In0.82Ga0.18As epitaxial layers were grown on the InP (100) substrate at various temperatures (430 °C, 410 °C and 390 °C) using low pressure metalorganic chemical vapor deposition (LP-MOCVD). Obvious protrusions and depressions were obseved on the surface of the In0.82Ga0.18As/InP heterostructure because of the movement of dislocations from the core to the surface. The surface morphologies of the In0.82Ga0.18As/InP (100) system became uneven with increasing temperature, which was associated with the formation of dislocations. Such research investigating the dislocation of large lattice mismatch heterostructures may play an important role in the future-design of semiconductor films.

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Zinc-substituted hydroxyapatite (Zn-HA, Ca 10-x Zn x (PO 4) 6 (OH) 2) is used as the modified material of hydroxyapatite (HA, Ca 10 (PO 4) 6 (OH) 2). In this work, Zn-HA with Zn contents of 10-30 mol% was used to produce Zn-HA/Mg composites by powder metallurgy. The calculated results showed that the crystallite size and lattice parameters of Zn-HA powders varied with the contents of 0-30 mol% Zn, confirming that the divalent Zn 2+ ions can substitute Ca 2+ ions in HA. Furthermore, the microstructure, mechanical property and electrochemical corrosion behavior of Zn-HA/Mg composites were investigated by SEM, compression tests, and electrochemical corrosion tests, respectively. The results indicate that the highest density and lowest porosity are obtained and the optimal mechanical property and corrosion resistance are achieved in the Zn-HA/Mg composites with 20 mol% Zn.