The Removal of Submicron Particles in Liquid-Based Cleaning

Busnaina, Ahmed; Dai, F.

doi:10.1080/00218469808011107

Cited by 15 publications

(8 citation statements)

References 13 publications

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“…These methods (such as liquid spray, spinning of wafers in liquid, techniques based on acoustic streaming and cavitations effect), could provide hydrodynamic lifting force of particles [77,82,83]. However, methods based on hydrodynamic forces are not efficient enough.…”

Section: Particles Removal-methods and Solutionsmentioning

confidence: 98%

Review on copper chemical–mechanical polishing (CMP) and post-CMP cleaning in ultra large system integrated (ULSI)—An electrochemical perspective

Ein‐Eli

Starosvetsky

2007

Electrochimica Acta

175

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Section: Particles Removal-methods and Solutionsmentioning

confidence: 98%

Review on copper chemical–mechanical polishing (CMP) and post-CMP cleaning in ultra large system integrated (ULSI)—An electrochemical perspective

Ein‐Eli

Starosvetsky

2007

Electrochimica Acta

175

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“…Kern [17] conducted an elaborate study on various wafer/chip cleaning techniques . In general, particles larger than 100 nm are completely removed with ultrasonic cleaning [18]. This tolerance element describes the position shift due to contamination.…”

Section: A Physical Tolerance Elementsmentioning

confidence: 99%

Tolerance Analysis Method for Passive Alignment of Photonic Chips

Gurp

Tichem

Staufer

2014

IEEE Trans. Compon., Packag. Manufact. Technol.

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This paper presents a novel tolerance analysis method for the photonic assembly domain. It systematically links the characteristics of microfabrication technology to optical coupling. A package design is described by physical tolerance elements, each one representing a specific microfabrication step. Mathematical tolerance elements are added to complete the package description. When error distributions are added to the physical tolerance elements, an optical coupling expectancy of a package design can be obtained. Moreover, it is demonstrated how this method can be used to characterize the contribution of individual design and fabrication factors to the total alignment performance. The tolerance analysis method is generic in nature since it makes use of elementary and generic fabrication steps. The main benefits of the method are its systematic approach, the insight it gives in the performance of a design as well as the major factors affecting the performance, and the analysis of design variations it allows.

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“…All low-k materials are hydrophobic in nature owing to their nonpolar or less polar bonds. Water has extremely polar OÀH bonds and a k value close to 80. Even a small amount of absorbed water significantly increases the total k value.…”

Section: Low-k Materialsmentioning

confidence: 99%

“…In the lower temperature regime between 35 and 45 8C, this is similar to the cleaning experiments involving DI water, in which stable cavitation activity has been shown to increase with temperature from 23 to 65 8C (at 760 kHz). Streaming that occurs near cavitation bubbles in the field is called microstreaming, which plays a role in cleaning [75][76][77][78][79][80][81][82][83].…”

Section: The Effect Of Temperaturementioning

confidence: 99%

Post‐CMP Cleaning

Park

Kim

2007

Microelectronic Applications of Chemical Mechanical Planarization

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With the decrease in device feature sizes, planarization of both front-and back-end layers by the chemical-mechanical planarization (CMP) process has become necessary for integrated circuit (IC) fabrication technologies smaller than 0.35 mm. As much as the industry has benefitted tremendously from the introduction and implementation of CMP, the very process has also brought along a set of new challenges to the fabs. For example, surface defects or imperfections such as leftover particles, organic residues, metallic contaminations, scratches, and corrosion spots can often be found on the polished wafers after the CMP process. These CMP-induced defects can arise from the slurries, the polishing pad, the pad conditioner, and to a lesser extent, the polisher. The leftover particles can physically attach to the wafer surface or, in the worst case, even partially embed into the top layer of a wafer. The CMP process can also leave metallic contamination typically in the range of 10 11 -10 12 atoms/ cm 2 . These contaminants mainly arise from the abraded metal lines, metal ions in the slurries, and polishers. In front-end applications such as a shallow trench isolation (STI) process, the control of metallic contamination levels is very critical because the following high-temperature process may lead to a complete incorporation of the metal ions into the lattice. In the case of back-end processes, if not removed, these metal contaminants can lower the breakdown voltage of devices. Also, fast diffusers such as copper can reach the active area from the backside surface or edge during the following thermal process [1]. During CMP, slurry additives and pad debris can leave organic residues on the Microelectronic Applications of Chemical Mechanical Planarization, Edited by Yuzhuo Li

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The Removal of Submicron Particles in Liquid-Based Cleaning

Cited by 15 publications

References 13 publications

Review on copper chemical–mechanical polishing (CMP) and post-CMP cleaning in ultra large system integrated (ULSI)—An electrochemical perspective

Review on copper chemical–mechanical polishing (CMP) and post-CMP cleaning in ultra large system integrated (ULSI)—An electrochemical perspective

Tolerance Analysis Method for Passive Alignment of Photonic Chips

Post‐CMP Cleaning

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