The role of 2-Dimensional materials for electronic devices

Kaushal, Priya; Khanna, Gargi

doi:10.1016/j.mssp.2022.106546

Cited by 32 publications

(7 citation statements)

References 127 publications

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“…In addition, the V bg -dependent trend of transconductance (g m (µS) =

) of ReSe 2 -based FET was presented (inset: Figure 2 a) which demonstrate that the proposed devices possess promising potential of delivering larger gain. Furthermore, to find the suitability of the prepared ReSe 2 transistors for digital applications, the devices must possess a current on/off ratio (I on /I off ) of at least 10 4 [ 48 ]. Figure 2 b presents log-scale I ds –V bg characteristics and the corresponding calculated I on /I off ratio as the inset.…”

Section: Resultsmentioning

confidence: 99%

Bias-Modified Schottky Barrier Height-Dependent Graphene/ReSe2 van der Waals Heterostructures for Excellent Photodetector and NO2 Gas Sensing Applications

et al. 2022

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Herein, we reported a unique photo device consisting of monolayer graphene and a few-layer rhenium diselenide (ReSe2) heterojunction. The prepared Gr/ReSe2-HS demonstrated an excellent mobility of 380 cm2/Vs, current on/off ratio ~ 104, photoresponsivity (R ~ 74 A W−1 @ 82 mW cm−2), detectivity (D* ~ 1.25 × 1011 Jones), external quantum efficiency (EQE ~ 173%) and rapid photoresponse (rise/fall time ~ 75/3 µs) significantly higher to an individual ReSe2 device (mobility = 36 cm2 V−1s−1, Ion/Ioff ratio = 1.4 × 105–1.8 × 105, R = 11.2 A W−1, D* = 1.02 × 1010, EQE ~ 26.1%, rise/fall time = 2.37/5.03 s). Additionally, gate-bias dependent Schottky barrier height (SBH) estimation for individual ReSe2 (45 meV at Vbg = 40 V) and Gr/ReSe2-HS (9.02 meV at Vbg = 40 V) revealed a low value for the heterostructure, confirming dry transfer technique to be successful in fabricating an interfacial defects-free junction. In addition, HS is fully capable to demonstrate an excellent gas sensing response with rapid response/recovery time (39/126 s for NO2 at 200 ppb) and is operational at room temperature (26.85 °C). The proposed Gr/ReSe2-HS is capable of demonstrating excellent electro-optical, as well as gas sensing, performance simultaneously and, therefore, can be used as a building block to fabricate next-generation photodetectors and gas sensors.

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“…In addition, the V bg -dependent trend of transconductance (g m (µS) =

Section: Resultsmentioning

confidence: 99%

Bias-Modified Schottky Barrier Height-Dependent Graphene/ReSe2 van der Waals Heterostructures for Excellent Photodetector and NO2 Gas Sensing Applications

et al. 2022

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“…4,5) Two-dimensional (2D) semiconductors like transition metal dichalcogenides (TMDCs) are considered to replace silicon and be a promising channel material because of their adjustable band gap of about 1-2 eV and the absence of short channel effect due to their atomic thickness. [6][7][8][9][10][11] To date, research on 2D semiconductor logic devices has made significant progress, such as CVD growth, [12][13][14][15] contact engineering, [16][17][18] and high-k dielectric growth on 2D surfaces. [19][20][21][22][23] In the TMDC family, MoS 2 and WSe 2 have been considered as n-channel FET and p-channel FET, respectively, which attracted much attention from academia and industry.…”

Section: Introductionmentioning

confidence: 99%

Realization of MoTe₂ CMOS inverter by contact doping and channel encapsulation

Xie,

Ke,

Ueno

et al. 2024

Jpn. J. Appl. Phys.

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The Fermi level pinning (FLP) effect significantly limits the application of electrical devices based on two-dimensional (2D) materials like transition metal dichalcogenide (TMDC). Here, a complementary metal–oxide–semiconductor (CMOS) inverter, which is comprised of an n- and a p-MoTe2 FET with optimized properties, has been successfully fabricated by using contact doping and channel encapsulation methods. Contact doping is to control the polarity of MoTe2-FET and improve contact properties, which is achieved by laser irradiation in different environmental conditions. The channel of two MoTe2-FETs was encapsulated by hexagonal boron nitride (h-BN) to enhance carrier mobility and device stability. The fabricated CMOS inverter showed a very high gain value of 31 at V dd = 4 V at room temperature.

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“…When the first 2D material, graphene, was isolated, − the nanoelectronics community was very excited, and it ignited the investigation of graphene and many other 2D materials. ,− The graphene thickness measures less than half a nanometer with exceptionally high electronic mobility as an important materials parameter for the transistor channel. Unfortunately, graphene is not suitable for MOSFETs because it is a semimetal and does not have a bandgap, giving rise to an unacceptable source-to-drain leakage current. , Fortunately, other 2D materials like transition-metal dichalcogenides (TMDs) and their derivatives emerged as suitable 2D materials for transistor channels. − While many challenges remain, after a decade of research, transistors made with 2D materials as channel materials have been fabricated with promising characteristics. − …”

Section: Introductionmentioning

confidence: 99%

Two-Dimensional Dielectrics for Future Electronics: Hexagonal Boron Nitride, Oxyhalides, Transition-Metal Nitride Halides, and Beyond

Vandenberghe

Osanloo

2023

ACS Appl. Electron. Mater.

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Recent developments in the field of two-dimensional (2D) van der Waals (vdW) dielectrics have captured great interest because of potential applications of 2D materials in future generations of complementary metal-oxide semiconductor (CMOS) technologies. In this Spotlight article, we highlight the progress we recently made toward the discovery of 2D vdW dielectrics, which will be critical to realizing a vdW transistor technology. We provide an overview of how to calculate the dielectric properties of 2D vdW dielectric candidates from first-principles using density functional theory. Furthermore, we show how to quantify the anticipated leakage current through a 2D vdW dielectric. We illustrate the use of hexagonal boron nitride (h-BN), oxyhalides, transition-metal nitride halides (TMNH), and alkaline hydroxides.

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The role of 2-Dimensional materials for electronic devices

Cited by 32 publications

References 127 publications

Bias-Modified Schottky Barrier Height-Dependent Graphene/ReSe2 van der Waals Heterostructures for Excellent Photodetector and NO2 Gas Sensing Applications

Bias-Modified Schottky Barrier Height-Dependent Graphene/ReSe2 van der Waals Heterostructures for Excellent Photodetector and NO2 Gas Sensing Applications

Realization of MoTe₂ CMOS inverter by contact doping and channel encapsulation

Two-Dimensional Dielectrics for Future Electronics: Hexagonal Boron Nitride, Oxyhalides, Transition-Metal Nitride Halides, and Beyond

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The role of 2-Dimensional materials for electronic devices

Cited by 32 publications

References 127 publications

Bias-Modified Schottky Barrier Height-Dependent Graphene/ReSe2 van der Waals Heterostructures for Excellent Photodetector and NO2 Gas Sensing Applications

Bias-Modified Schottky Barrier Height-Dependent Graphene/ReSe2 van der Waals Heterostructures for Excellent Photodetector and NO2 Gas Sensing Applications

Realization of MoTe2 CMOS inverter by contact doping and channel encapsulation

Two-Dimensional Dielectrics for Future Electronics: Hexagonal Boron Nitride, Oxyhalides, Transition-Metal Nitride Halides, and Beyond

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Realization of MoTe₂ CMOS inverter by contact doping and channel encapsulation