The role of an SiC interlayer at a graphite–silicon liquid interface in the solution growth of SiC crystals

Lee, Ji Eun; Kim, Byeong Geun; Yoon, Ji Young; Ha, Minh-Tan; Lee, Myung Hyun; Kim, Young‐Hee; Seo, Won Seon; Choi, Heon Jin; Lee, Won Jae; Jeong, Sangtae

doi:10.1016/j.ceramint.2016.04.060

Cited by 14 publications

(12 citation statements)

References 27 publications

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“…The C concentration gradient near the crucible-melt can be attributed to the dissolution of C from the crucible in the melt, as reported by Kim et al. 13) On the other hand, the C concentration gradient near the meltcrystal interface can be attributed to the consumption of C for the growth of the SiC crystals, as reported by Ha et al 7) The temperature gradient in the melt (Fig. 4(a)) was similar to the C concentration gradient except the broader temperature boundary layer near the melt surface and crucible wall.…”

Section: Resultssupporting

confidence: 65%

Effect of Hot-zone Aperture on the Growth Behavior of SiC Single Crystal Produced via Top-seeded Solution Growth Method

Ha¹,

Shin²,

Bae³

et al. 2019

J. Korean Ceram. Soc

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The top-seeded solution growth (TSSG) method is an effective approach for the growth of high-quality SiC single crystals. In this method, the temperature gradient in the melt is the key factor determining the crystal growth rate and crystal quality. In this study, the effects of the aperture at the top of the hot-zone on the growth of the SiC single crystal obtained using the TSSG method were evaluated using multiphysics simulations. The temperature distribution and C concentration profile in the Si melt were taken into consideration. The simulation results showed that the adjustment of the aperture at the top of the hot-zone and the temperature gradient in the melt could be finely controlled. The surface morphology, crystal quality, and polytype stability of the grown SiC crystals were investigated using optical microscopy, high-resolution X-ray diffraction, and micro-Raman spectroscopy, respectively. The simulation and experimental results suggested that a small temperature gradient at the crystal-melt interface is suitable for growing high-quality SiC single crystals via the TSSG method.

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Section: Resultssupporting

confidence: 65%

Effect of Hot-zone Aperture on the Growth Behavior of SiC Single Crystal Produced via Top-seeded Solution Growth Method

Ha¹,

Shin²,

Bae³

et al. 2019

J. Korean Ceram. Soc

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“…Because SiC forms incongruent melts of Si with dissolved C, the composition ratio of Si and C is inevitably not uniform in the melt of the TSSG method. 9 When SiC is formed at the crystal, the same amount of Si and C is consumed from the melt. Because C has low solubility in Si liquid, however, C can deplete easily near the crystal without a continuous C feed by fluid flow.…”

Section: Introductionmentioning

confidence: 99%

Flow modification enhancing the growth rate in top seeded solution growth of SiC crystals

Shin

et al. 2019

RSC Adv.

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“…Then, SiC crystals will be formed in the inner part of graphite by the reaction between Si liquid and graphite, as follows: Si(l) + C(s) → SiC(s). 30 Moreover, Si liquid should revert to Si crystals due to the rearrangement of Si atoms after cooling. 30 However, the results of Raman analysis (Fig.…”

Section: Resultsmentioning

confidence: 99%

Defect-free SiC nanowires grown from Si-deposited graphite by thermal annealing: temperature-dependent nucleus formation and nanowire growth behaviors

Kim

Choi

et al. 2016

CrystEngComm

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Herein, we introduce a facile growth method of catalyst-and defect-free SiC nanowires using a Si thin film as a Si source. Si thin films were deposited on graphite by radio frequency sputtering at room temperature.When they were thermally annealed at 1400 °C, single-crystalline 6H-SiC nanowires of tens of micrometers length were spontaneously grown on the surface of Si-deposited graphite. No catalyst residues and defects, such as metal tips and stacking faults, were observed in the as-grown SiC nanowires. The structural and morphological changes of the films as a function of annealing temperature were investigated to establish the growth mechanism of SiC nanowires. SiC nanowires were grown by the consecutive occurrence of two different mechanisms, the formation of SiC nuclei and the vapor-solid growth of SiC nanowires, which is dependent on the annealing temperature. Our study shows that the Si thin film is an attractive Si source from which to grow defect-free SiC nanowires and helps to develop the crystal growth technique of high-quality SiC for various applications such as in optoelectronics and power electronic devices.

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The role of an SiC interlayer at a graphite–silicon liquid interface in the solution growth of SiC crystals

Cited by 14 publications

References 27 publications

Effect of Hot-zone Aperture on the Growth Behavior of SiC Single Crystal Produced via Top-seeded Solution Growth Method

Effect of Hot-zone Aperture on the Growth Behavior of SiC Single Crystal Produced via Top-seeded Solution Growth Method

Flow modification enhancing the growth rate in top seeded solution growth of SiC crystals

Defect-free SiC nanowires grown from Si-deposited graphite by thermal annealing: temperature-dependent nucleus formation and nanowire growth behaviors

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