The role of deep level traps in barrier height of 4H–SiC Schottky diode

Zaremba, G.; Adamus, Z.; Jung, W.; Kamińska, E.; Borysiewicz, M.; Korwin-Mikke, K.

doi:10.1016/j.mseb.2012.03.051

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Cited by 7 publications

(2 citation statements)

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“…In order to correlate such behavior with the local U B shifts revealed by IR-LIT, the experimental I-V curves were fitted with the model formed by Eqs. (5)- (7). In this sense, each hot spot (H1, H2 and H3) is considered as an equivalent Schottky diode, connected in parallel to the main diode defined by the more homogeneous Schottky contact.…”

Section: Results Discussionmentioning

confidence: 99%

See 1 more Smart Citation

Local non invasive study of SiC diodes with abnormal electrical behavior

León¹,

Perpiñà²,

Vellvehı́³

et al. 2015

Solid-State Electronics

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Section: Results Discussionmentioning

confidence: 99%

“…Several publications [6,7] have reported that device failure in such scenarios is due to local structural or compositional modifications that result into surface weak spots. The spots present an unexpected electrical behavior, which cause deviations from the device nominal static I/V curve, referred here as DI Sch .…”

Section: Introductionmentioning

confidence: 99%