Local non invasive study of SiC diodes with abnormal electrical behavior

León, Javier; Perpiñà, X.; Vellvehı́, M.; Jordà, X.; Godignon, P.

doi:10.1016/j.sse.2015.05.008

Cited by 6 publications

(4 citation statements)

References 34 publications

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“…To identify the areas of conduction in forward and reverse biasing in the DUT, Small Signal Modulation for Thermal Analysis (SIMTA) has been employed. As detailed in [26], this method involves superposing a small signal sine wave voltage over a fixed DC operating point to determine the DUT's active areas according to this biasing point. Fig.…”

Section: Experimental Details and Implementationmentioning

confidence: 99%

“…With this method, the spectral components of the surface temperature distribution are identified. This data postprocessing technique has found utility in microelectronic systems for locating and studying hot spots associated with high-stress operating locations within a device or IC (i.e., weak spots) [22]- [24], [26]. To this end, various frequency modulation techniques have been employed to isolate weak spots resulting from local high current concentration or power consumption.…”

mentioning

confidence: 99%

“…To this end, various frequency modulation techniques have been employed to isolate weak spots resulting from local high current concentration or power consumption. All these methods rely on a single (homodyne) [22], [26] or double (heterodyne) [23] sinusoidal tone excitation of the sample, with the latter being capable of down-converting high frequency information to a frequency detectable by the imaging system. However, a sinusoidal-like biasing waveform cannot be directly applied to power semiconductor devices under real operational conditions.…”

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confidence: 99%

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Die-Level Transient Thermal Imaging Based on Fourier Series Reconstruction for Power Industrial Electronics

Ferrer,

Aviñó,

Vellvehi

et al. 2023

IEEE Trans. Instrum. Meas.

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A novel solution for off-chip electrothermal studies in power devices at die-level and short timescales is reported. The proposed method involves acquiring a sequence of thermal images on top of the die with an IR camera, while the device is biased under a periodic non-harmonic modulated current. Fourier coefficients are then extracted using lock-in strategies and the time evolution of the device thermal map is reconstructed using Fourier series. To evaluate and showcase its potential, the conventional approach of boxcar averaging is implemented and used as a reference. As a case study, a reverse conducting-IGBT (RC-IGBT) is thermally measured under both forward and reverse modes. The proposed strategy significantly improves the thermal and time resolution, overcoming the limitations of the camera's frame rate and noise resolution. Moreover, the impact of current crowding on the power device is studied at the millisecond time scale, considering both biasing modes.

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Section: Experimental Details and Implementationmentioning

confidence: 99%

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confidence: 99%

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confidence: 99%

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Die-Level Transient Thermal Imaging Based on Fourier Series Reconstruction for Power Industrial Electronics

Ferrer,

Aviñó,

Vellvehi

et al. 2023

IEEE Trans. Instrum. Meas.

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“…However, with off-chip measurements in the time domain, the thermal interaction among all MMIC parts cannot always be avoided, and determining the local power consumption per component is not feasible. In contrast, thermal analysis in the frequency domain can prevent the thermal interaction between them [27], [28]. When a heat source is modulated at a fixed frequency f0, the temperature field confines around it as f0 increases, and heat sources do not thermally interact.…”

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confidence: 99%

Local Thermal Resistance Extraction in Monolithic Microwave Integrated Circuits

Vellvehı́

Perpiñà

León

et al. 2021

IEEE Trans. Ind. Electron.

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The thermal resistance of a High Electron Mobility Transistor (HEMT) forming part of a Monolithic Microwave Integrated Circuit (MMIC) is non-invasively extracted under real working conditions (electrical and thermal) by infrared thermal imaging. The HEMT thermal resistance considers the device local maximum temperature and dissipated power. An experimental approach to this end is currently not available, as the HEMTs thermal interaction does not allow extracting its individual heat generation. Thanks to thermal field confinement offered by heat source frequency modulation, the power dissipation in each device is inferred, making feasible its individual thermal resistance extraction. As a result, reasonable values of the local thermal resistance of each individual HEMT integrated in the MMIC (i.e., 57.8+3.4 °C/W and 24.8+1.4 °C/W) are obtained in agreement with studies on discrete devices available in the literature.

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