The Role of Diffuse Scattering on Microdefects in the Precise Lattice Parameter Measurement

Holý, V.; Härtwig, J.

doi:10.1002/pssb.2221450202

Cited by 9 publications

(4 citation statements)

References 13 publications

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“…where A is determined by the inner cluster radius R d and its strength 4, A 4R 3 d . The defect strength in its turn is proportional to the crystal volume change owing to a defect insertion into the crystal (Holy Â & Ha È rtwig, 1988).…”

Section: Spherical Amorphous Clusters With Coulomb-like Decreased Dismentioning

confidence: 99%

The statistical kinematical theory of X-ray diffraction as applied to reciprocal-space mapping

Nesterets

Пунегов

2000

Acta Crystallogr A Found Crystallogr

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The statistical kinematical X-ray diffraction theory is developed to describe reciprocal-space maps (RSMs) from deformed crystals with defects of the structure. The general solutions for coherent and diffuse components of the scattered intensity in reciprocal space are derived. As an example, the explicit expressions for intensity distributions in the case of spherical defects and of a mosaic crystal were obtained. The theory takes into account the instrumental function of the triple-crystal diffractometer and can therefore be used for experimental data analysis.

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Section: Spherical Amorphous Clusters With Coulomb-like Decreased Dismentioning

confidence: 99%

The statistical kinematical theory of X-ray diffraction as applied to reciprocal-space mapping

Nesterets

Пунегов

2000

Acta Crystallogr A Found Crystallogr

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“…6a, b show the experimental reflection curves of sample B in both diffractions and the fitted theoretical curves. Assuming that the clusters are SiO, precipitates we can calculate the true cluster radius R from those parameters after [28], the values are given in Table 1 again. Within the kinematical approximation the measured reflection curves of both crystals were analyzed considering both defect models.…”

Section: The Double Crystal Measurementsmentioning

confidence: 99%

X‐Ray Double and Triple Crystal Diffractometry of Silicon Crystals with Small Defects

Holý

Kuběna

1992

Physica Status Solidi (b)

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Intensities of X-ray diffraction and X-ray diffuse scattering are calculated on the basis of the kinematical approximation of the statistical dynamical diffraction theory for crystals with randomly distributed small defects. Various approaches are derived for defect parameter determination (the density, size, and strength of defects) and some of them are compared with previously published X-ray methods. The theoretical results obtained for two various defect models are proved by double and triple crystal diffractometry measurements.Aufgrund der kinematischen Niiherung fur die statistische dynamische Beugungstheorie der Rontgenstrahlen in Kristallen mit statistisch verteilten Mikrodefekten werden die Beugungsintensitgt und die diffuse Streuung der Rontgenstrahlen berechnet. Verschiedene Methoden fur die Bestimmung der Defektparameter (Defektdichte, DefektgroRe und Kraft des Deformationsfeldes), die aus der Theorie folgen, werden mit publizierten Methoden verglichen. Die theoretischen Ergebnisse werden mit diffraktometrischen Messungen verglichen.

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“…The mean concentration of OP cOp would be (cO -cf)/n, where n means the number of O atoms in OP. In the equilibrium conditions the averaged dilatation of the Si lattice does not depend on the degree of the oxygen precipitation [7]. However, in our case ΔV is not equal to 0 because some misfit was induced during preparation of the initial samples at cooling, being connected with different thermal expansion of Si and SiO2.…”

mentioning

confidence: 57%

“…1), G -shear modulus of Si, KOP -bulk modulus of SiO2 and vSiO2 -volume corresponding to one SiO2 molecule in the stress-free state [7].…”

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confidence: 99%

Hydrostatic Pressure Effect on Oxygen Precipitates in Silicon Single Crystal

et al. 1991

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The effect of hydrostatic pressure on some properties of Cz-Si with oxygen precipitates is investigated. The observed phenomena are discussed in terms of misfit between the precipitates and Si matrix. Czochralski-grown Si single crystals (Cz-Si) subjected to hydrostatic pressure (HP) can change defect stucture and so the bulk properties influenced by defects. This effect is related mostly to the oxygen-induced defects existing in the bulk of annealed samples [1-4], e.g. oxygen precipitates (OP) composed of SiO2 [3].In this paper we investigate the effect of HP on the defect structure of Cz-Si monocrystals containing OP. The isostatic and pulsating HP as well as ultrasound (US) treatments at room temperature were applied. Also the high pressure-high temperature (HP-HT) treatment was used to modify the elastic misfit ε at the OP/Si boundary [3].The OP density dop in the preliminary annealed Cz-Si single crystals (oxygen concentration cO up to 10 18 cm-3) was in the range of (10 5-10 7 ) cm-2 . The samples were subjected to the HP treatment up to 1.8 GPa, to the HP-HT treatment at HT up to 1620 K or to the HP-US treament at HP up to 1 GPa (the US amplitude up to 9 MPa, frequency 17 kHZ) [5]. The HP induced changes of (317)

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The Role of Diffuse Scattering on Microdefects in the Precise Lattice Parameter Measurement

Cited by 9 publications

References 13 publications

The statistical kinematical theory of X-ray diffraction as applied to reciprocal-space mapping

The statistical kinematical theory of X-ray diffraction as applied to reciprocal-space mapping

X‐Ray Double and Triple Crystal Diffractometry of Silicon Crystals with Small Defects

Hydrostatic Pressure Effect on Oxygen Precipitates in Silicon Single Crystal

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