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The effect of high temperature (up to 1120°C)-high pressure (up to 1.1 GPa) treatment mr tle resulting defect structure of preannealed (450-725°C, up to 96 hours) Czochralski grown Si crystals was studied by X-ray diffraction. The values of the Debye-Waller static factor and of the root-mean-square atomic dispalacement due to defects were determined for various Laue reflections. Well-defined development of the cłuster like defect structure after high temperatnre pressurization depending to a substantial extent mi the preannealing conditions was observed.

Diffuse scattering of X-rays on microdefects play a substantial role in the interpretation of the results of lattice parameter measurements according to the Bond method. A lattice parameter can be defined on the basis of the elastically quasiperfect reference crystal. To determine this lattice parameter a diffuse scattering correction must be used. Bei der Interpretation von nach der Bond-Methode bcstimmten Gitterparametern spielt die anMikrodefekten diffus gestreute Rontgenstrahlung eine wesentliche Rolle. Ein Gitterparameter kann auf der Basis eines elastisch quasiperfekten Referenzkristalls definiert werden. Urn diesen Gitterparameter zu bestimmen, mu8 eine Korrektur fur die diffuse Streuung berucksichtigt werden. l ) KotlB&ka 2, CS-61137 Brno, Czechoslovakia. 2, Max-Wien-Platz 1, DDR-6900 Jena, GDR.

The effect of hydrostatic pressure on some properties of Cz-Si with oxygen precipitates is investigated. The observed phenomena are discussed in terms of misfit between the precipitates and Si matrix. Czochralski-grown Si single crystals (Cz-Si) subjected to hydrostatic pressure (HP) can change defect stucture and so the bulk properties influenced by defects. This effect is related mostly to the oxygen-induced defects existing in the bulk of annealed samples [1-4], e.g. oxygen precipitates (OP) composed of SiO2 [3].In this paper we investigate the effect of HP on the defect structure of Cz-Si monocrystals containing OP. The isostatic and pulsating HP as well as ultrasound (US) treatments at room temperature were applied. Also the high pressure-high temperature (HP-HT) treatment was used to modify the elastic misfit ε at the OP/Si boundary [3].The OP density dop in the preliminary annealed Cz-Si single crystals (oxygen concentration cO up to 10 18 cm-3) was in the range of (10 5-10 7 ) cm-2 . The samples were subjected to the HP treatment up to 1.8 GPa, to the HP-HT treatment at HT up to 1620 K or to the HP-US treament at HP up to 1 GPa (the US amplitude up to 9 MPa, frequency 17 kHZ) [5]. The HP induced changes of (317)

The defect structure of Czochralski grown silicon single crystals annealed at 870-1400 K under hydrostatic pressure up to 1 GPa was investigated by conventional and synchrotron radiation X-ray topography and by reciprocal space mapping. Hydrostatic pressure promotes oxygen precipitation from oversaturated Si-O solid sołution and the creation of structural defects.