Stress-induced oxygen precipitation in CzSi

Pressure assisted evolution of defects in silicon

“…Previous investigations [13][14][15][16][17] have revealed that enhanced hydrostatic pressure could alter the diffusion kinetics of various dopants, affect precipitation processes and influence the formation and evolution of various defects in Si following heat treatment. In this context, it will be of interest to study the effect of pressure on oxygen-related defects in Si.…”

Defect Structure of Pressure Treated Czochralski Grown Silicon Investigated by X-Ray Topography and Diffractometry

“…Annealing as-grown Cz-Si at 1230-1400 K under HP caused enhanced oxygen precipitation, especially in the samples with high initial c0 values [2]. For example, whereas the sample with initial c0 = 1 x 10 18 cm-3 showed a decrease in c0 to 8.2 x 10 17 cm-3 after annealing for 5 hours at 1230 K at 10 5 Pa, the c0 value for the same sample annealed at 1230 K under 10 9 Pa was 3.4 x 10 17 cm-3.…”

“…• creation (at 870-1000 K) of nucleation centers (NCs) for further (at 1230-1400 K) oxygen precipitation, and • enhanced oxygen precipitation at 1230-1400 K [2].…”

“…In the case of silicon it is important also for its application in microelectronics. Valuable data concerning this subject were obtained for Czochralski grown silicon single crystals (Cz-Si) by annealing them under enhanced hydrostatic pressure (HP) [1,2]. Such treatment introduces stress into Cz-Si and influences oxygen precipitation and creation of defects.…”

Positron Annihilation Studies of Czochralski-Grown Silicon Annealed Under Pressure

“…An additional factor enhancing the precipitation is the use of high (up to 1.4 GPa) hydrostatic pressure during the final annealing. In (575) particular, the amount of oxygen removed from interstitial sites at 950°C rises by a factor of 3 if a hydrostatic pressure of 1 GPa is applied [6]. In some of the presently studied samples as much as 85% of interstitial oxygen has precipitated.…”