The Role of Feedback Resistors and TID Effects in the ASET Response of a High Speed Current Feedback Amplifier

Roig, F.; Dusseau, L.; Ribeiro, Paulo F.; Auriel, G.; Roche, N.; Privat, A.; Vaillé, J.-R.; Boch, J.; Saigné, Frédéric; Marec, R.; Calvel, P.; Bezerra, F.; Ecoffet, R.; Azais, B.

doi:10.1109/tns.2014.2369347

Cited by 13 publications

(5 citation statements)

References 17 publications

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“…Furthermore, as the technology nodes scale down, the decreased transistor geometries and thinner gate oxides, reduce the charge required to disrupt normal functionality, thus making the circuits more prone to ASETs. Thus in deep sub-micron technologies [69][70][71] ASETs are of major concern and impose critical issues for the microelectronic circuits reliability, while much ongoing research deals with characterizing the optimum circuit topologies, technology processes, devices and design approaches in order to mitigate ASETs in space applications [36,39,40,45,52,[72][73][74][75][76][77][78][79][80][81][82][83][84][85][86].…”

Section: Single Event Effectsmentioning

confidence: 99%

“…Beyond the existing performance requirements of commercial applications, space microelectronics are required to be robust to the increased radiation levels of the space environment [5,[18][19][20][21][22][23][24][25][26][27]. Hence, there is a lot of ongoing research activity to investigate the design of CMOS based analog, digital and mixed-signal, radiation tolerant circuits [28][29][30][31][32][33][34][35][36][37][38][39][40][41][42][43][44][45], including those that operate in the subthreshold regime [46][47][48].…”

Section: Introductionmentioning

confidence: 99%

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Low-Power, Subthreshold Reference Circuits for the Space Environment: Evaluated with γ-rays, X-rays, Protons and Heavy Ions

et al. 2019

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The radiation tolerance of subthreshold reference circuits for space microelectronics is presented. The assessment is supported by measured results of total ionization dose and single event transient radiation-induced effects under γ -rays, X-rays, protons and heavy ions (silicon, krypton and xenon). A high total irradiation dose with different radiation sources was used to evaluate the proposed topologies for a wide range of applications operating in harsh environments similar to the space environment. The proposed custom designed integrated circuits (IC) circuits utilize only CMOS transistors, operating in the subthreshold regime, and poly-silicon resistors without using any external components such as compensation capacitors. The circuits are radiation hardened by design (RHBD) and they were fabricated using TowerJazz Semiconductor’s 0.18 μm standard CMOS technology. The proposed voltage references are shown to be suitable for high-precision and low-power space applications. It is demonstrated that radiation hardened microelectronics operating in subthreshold regime are promising candidates for significantly reducing the size and cost of space missions due to reduced energy requirements.

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Section: Single Event Effectsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Low-Power, Subthreshold Reference Circuits for the Space Environment: Evaluated with γ-rays, X-rays, Protons and Heavy Ions

et al. 2019

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“…Single event upsets (SEUs) is another type of SEE, which is capable to flipping the data of a flip-flop or latch. SEE problem have been investigated in 6T SRAM circuits [5][6][7]. The astronomy applications have been ruled by semiconductor based devices that are mostly susceptible to radiation phenomenon.…”

Section: Introductionmentioning

confidence: 99%

“…The astronomy applications have been ruled by semiconductor based devices that are mostly susceptible to radiation phenomenon. The SEE investigation have been done in the previous literatures such as full-custom CMOS op-amp, Delta-Sigma modulators, Comparators, DC/DC power converters, high-speed current feedback amplifier [10][11][12][13][14]. A new scaling trend allows the RF CMOS technology to work in the giga-hertz of range applications, which is used to compete with other technology contenders, for instance SiGe, BiCMOS and III-IV technology.…”

Section: Introductionmentioning

confidence: 99%

Heavy-ion induced analog SET impact on inter-stage inductor low noise amplifiers at 10 and 30 GHz frequencies

Periyasamy¹

2023

Preprint

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This research article investigated the analog single transient (Analog SET) impact on inter-stage inductor low-noise amplifiers (LNA) working in the 10 and 30 GHz frequencies. The impact of a single event is analysed in two different cases; (a) the absence of radio-frequency signal input (i.e., DC voltage alone), and (b) the presence of radio-frequency with the DC voltage. Case (a) is analysed in the time-domain, where as the collected charge (QCol) is estimated by the integration of transient current with time appropriate limits, and Case (b) evaluates the LNA output disturbance by spectrogram(mathematical tool) outcome due to radiation hits on the MOSFET (Metal-Oxide Semiconductor Field Effect Transistor), which is used for formulate the LNA circuit. The article conclusion arrives from estimated collected charge (QCol) on the ion track of the device which is used to formulate the LNA, and their spectrogram results of the disturbed LNA output on the radiation environment. Based on these LNA metrics, the radiation strike disturb the LNA more when working on a low-frequency signal (10 GHz) than the LNA working on a high-frequency signal (30 GHz).

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“…In the literature, the SEE problem has been reported in many combinational circuits as well as sequential circuits [3][4][5][6][7]. The SET investigation has been discussed in analog and digital circuits such as operational amplifiers, SRAM, power converters, feedback amplifiers, and comparators [8][9][10][11][12]. In order to compete with other technological rivals like high-electron mobility transistors (HEMT), Si-Ge, Bi-CMOS, and III-IV technology, RF CMOS technology now has the capability to drive gigahertz-range applications thanks to a new scaling trend.…”

Section: Introductionmentioning

confidence: 99%

Comparison of single event effect on cascoded low noise amplifier performance metrics for two different frequencies

Rajendiran

2023

Phys. Scr.

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This manuscript analyses the single event effects (SEE’s) on the well-known cascoded low noise amplifier (LNA) topology connected with an inter-stage inductor sandwiched between the common source (CS) and common gate transistors for boosting the LNA parameters (i.e., gain, etc.). In this article, we have considered that the LNA operates at two different frequencies, such as 10 and 30 GHz, in a radiation prone environment. The effect of SEEs is analyzed in two ways: (i) non-applying of a RF input with dc voltage only, and (ii) applying of a RF input with dc bias voltage. The first analysis uses to evaluate the collected charge (QCollected) through basic integration for drain terminal momentary current spike with suitable time period, and the second analysis estimates the LNA output discontinuity (distortion) using a spectrogram (short-time FFT) to determine the radiation strikes on cascoded LNA. The collected charge is calculated in the temporal analysis, and the discontinuity of LNA’s RF output is analysed using the spectrogram in the frequency domain analysis. From the temporal and frequency analysis, the LNA that operates at a lower frequency (10 GHz) provides more discontinuity in LNA output (causing more disturbance) than the LNA that operates at a higher frequency (30 GHz).

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The Role of Feedback Resistors and TID Effects in the ASET Response of a High Speed Current Feedback Amplifier

Abstract: International audienc

Cited by 13 publications

References 17 publications

Low-Power, Subthreshold Reference Circuits for the Space Environment: Evaluated with γ-rays, X-rays, Protons and Heavy Ions

Low-Power, Subthreshold Reference Circuits for the Space Environment: Evaluated with γ-rays, X-rays, Protons and Heavy Ions

Heavy-ion induced analog SET impact on inter-stage inductor low noise amplifiers at 10 and 30 GHz frequencies

Comparison of single event effect on cascoded low noise amplifier performance metrics for two different frequencies

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