The role of internal structure in the anomalous switching dynamics of metal-oxide/polymer resistive random access memories

Abstract

Articles you may be interested in Unipolar resistive switching in metal oxide/organic semiconductor non-volatile memories as a critical phenomenon J. Appl. Phys. 118, 205503 (2015); 10.1063/1.4936349Reproducible bipolar resistive switching in entire nitride AlN/n-GaN metal-insulator-semiconductor device and its mechanism Appl. Phys. Lett. 105, 193502 (2014) The dynamic response of a non-volatile, bistable resistive memory fabricated in the form of Al 2 O 3 /polymer diodes has been probed in both the off-and on-state using triangular and step voltage profiles. The results provide insight into the wide spread in switching times reported in the literature and explain an apparently anomalous behaviour of the on-state, namely the disappearance of the negative differential resistance region at high voltage scan rates which is commonly attributed to a "dead time" phenomenon. The off-state response follows closely the predictions based on a classical, two-layer capacitor description of the device. As voltage scan rates increase, the model predicts that the fraction of the applied voltage, V ox , appearing across the oxide decreases. Device responses to step voltages in both the off-and on-state show that switching events are characterized by a delay time. Coupling such delays to the lower values of V ox attained during fast scan rates, the anomalous observation in the on-state that, device currents decrease with increasing voltage scan rate, is readily explained. Assuming that a critical current is required to turn off a conducting channel in the oxide, a tentative model is suggested to explain the shift in the onset of negative differential resistance to lower voltages as the voltage scan rate increases. The findings also suggest that the fundamental limitations on the speed of operation of a bilayer resistive memory are the time-and voltage-dependences of the switch-on mechanism and not the switch-off process. V C 2013 American Institute of Physics. [http://dx

Multi-Level Cell Properties of a Bilayer Cu2O/Al2O3 Resistive Switching Device

“…The factor γ is referred to as a voltage acceleration parameter to a soft breakdown process [27] and higher values have already been reported for thinner films [28]. Similar results were reported for the breakage of a thin Al 2 O 3 film [27]. This means, that the aluminum oxide plays a dominant role in the pre-forming process.…”

Unipolar resistive switching in metal oxide/organic semiconductor non-volatile memories as a critical phenomenon

“…It was found that the time interval t d needed to switch a diode from the off-to the on-state depends exponentially on the magnitude of the bias applied, t d ¼ t 0 exp ðÀcV a Þ. 64 This experimental finding is consistent with the transition from the off-state to the on-state driven by injection and redistribution of charge.…”

Fabrication of a W/CuxO/Cu memristor with sub-micron holes for passive sensing of oxygen

“…Thin film metal oxides can undergo adsorption and diffusion of oxygen [10,11,20] in the presence of ambient air. As demonstrated in Fig.…”

“…Considerable attention has also been given to the memristor's application for logic, including as synapses in neuromorphic systems [8]- [10]. Over the past several years, endless literature has reported improvements in memristive switching behavior, including increased speeds [2,11] and endurances [7] for particular metal oxide combinations and stoichiometric ratios [2,12].…”