The role of low temperatures in the operation of logic circuitry

Keyes, Robert W.; Harris, E.; Konnerth, K.

doi:10.1109/proc.1970.8063

Cited by 58 publications

(3 citation statements)

References 36 publications

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“…Since nearly all degradation mechanisms in electronic devices, such as interdiffusion, corrosion and electro-migration have a thermal activation component and an exponential dependence on temperature. Orders of magnitude improvement in reliability is expected upon cooling Keyes et al, 1970. Although the effect of temperature on reliability has been thoroughly verified empirically for elevated temperatures, it is difficult to demonstrate that it holds true for reduced temperatures as well because of the extremely low rates involved.…”

Section: Advantages Of Using Semiconductor Devices At Low Temperaturesmentioning

confidence: 99%

Cryogenic Operation of Silicon Power Devices

Singh¹,

Baliga²

1998

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Section: Advantages Of Using Semiconductor Devices At Low Temperaturesmentioning

confidence: 99%

Cryogenic Operation of Silicon Power Devices

Singh¹,

Baliga²

1998

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“…This energy gap corresponds to gap frequencies in the range of (8.8 ± 2.3) THz. Since we are interested in applications well below the gap frequency in the millimeter-wave region (30-300 GHz), we use the two-fluid model [13,14] to calculate the complex conductivity.…”

Section: Loss Reductionmentioning

confidence: 99%

Dielectric Loss Reduction In Superconducting Transmission Lines

Young¹,

Itoh²

1988

SPIE Proceedings

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The dominant loss mechanism is the conductor loss in planar MIC waveguides on low -loss substrates. Superconductors can dramatically reduce the conductor loss, so further reductions in the total loss must come in the dielectric or radiation loss. This paper investigates the use of ^-90 K superconductors to reduce the conductor loss. A rigorous mode -matching procedure is used to analyze two microstrip -like transmission lines for their dielectric loss. Total loss reductions are on the order of 10 to 100 times at 10 GHz when using superconductors and dielectric loss reduction techniques. Reductions at other frequencies below 100 GHz should be similar.

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“…Also, if the chip is immersed in liquid nitrogen, the chip-liquid heat transfer rate is larger than the chip-air transfer rate associated with RT operation. Therefore, net heat transfer rate is almost one order of magnitude larger at LN than at RT [2] .…”

Section: Thermal Conductivitymentioning

confidence: 95%

Low-temperature CMOS-a brief preview

Clark¹,

El-Kareh²,

Pires³

et al.

1991 Proceedings 41st Electronic Components &Amp; Technology Conference

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Device improvements obtained from exploiting the dependence of physical characteristics of silicon at low temperature are above and beyond those improvements obtained from the usual geometric scaling of device dimensions. As device geometries continue to shrink into the deep submicrometer regime, second-order effects begin to limit further increases in device speed from scaling alone. Temperature scaling provides an additional variable for system optimization. The'gain in performance at cryogenic temperatures, however, is at the expense of inconvenience and additional cost for system refrigeration, and of increased susceptibility to hot-carrier degradation. Optimizing CMOS technology and design for low-temperature applications can increase performance and reduce power dissipation without increasing hot-carrier degradation.

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The role of low temperatures in the operation of logic circuitry

Cited by 58 publications

References 36 publications

Cryogenic Operation of Silicon Power Devices

Cryogenic Operation of Silicon Power Devices

Dielectric Loss Reduction In Superconducting Transmission Lines

Low-temperature CMOS-a brief preview

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