Densely packed high-aspect-ratio
(HAR) nanostructures are the core
elements of future microelectronics components. Manufacturing these
nanostructures for device applications requires multiple fabrication
steps involving wet processes, followed by a drying step. During drying,
these nanostructures experience strong capillary forces that induce
their bending and cause them to permanently stick to their neighbors,
a phenomenon often referred to as pattern collapse. The pattern collapse
and the difficulty in reliably identifying damaged nanostructures
pose a critical challenge for the fabrication of HAR devices. Here,
we developed a machine learning-based approach to identify collapsed
nanostructures from a large patterned array of vertical Si nanopillars
with 99.84% accuracy. Furthermore, we show that the pattern collapse
can be reversed by selectively etching the native surface SiO2 layer of the nanopillars at their adhesions. Our approach
for accurate and rapid identification of the collapsed nanostructures
combined with the method to reverse this damage provides a versatile
platform for developing high-yield fabrication processes for nanoscale
semiconductor devices.