The role of non-homogeneous barrier on the electrical performance of 15R–SiC Schottky diodes grown by in-situ RF sputtering

Radiation Response of Large-Area 4H-SiC Schottky Barrier Diodes

“…At temperatures lower than 250 K, two distinct regions in the forward I-V characteristics were observed. They were attributed to Schottky barrier inhomogeneity giving rise to parallel Schottky diodes with lower barrier heights, consequently increasing the ideality factor in the low-current regime [ 26 , 27 , 28 ]. For the rest, the electric characteristics of the SBDs, such as the ideality factor and corresponding saturation current density, did not change with the increase in the active area.…”

Reducing the Cut-In Voltage of a Silicon Carbide/p-Silicon Heterojunction Diode Using Femtosecond Laser Ablation

“…It turns out that the low field mobility in 15R-SiC is larger than that in 4Hand 6H-SiC, which makes this polytype an attractive material for the metal oxide−semiconductor field-effect transistors (MOSFETs). 34,35 There is a clear trend of improving crystallinity with laser power from 1.27 to 9 W. The peaks representing the SiC polytypes grow with increments in the laser power. This is because higher cumulative fluence induces higher-temperature plasma, 30 which not only enhances the SiC content but also improves crystallinity by providing relatively more crystallization time to facilitate the development of larger crystallites 36,37 This trend is depicted in Figure 4a−c, where the SiC peaks intensities increase with the higher power, thus providing relatively more time for crystallization.…”

“…Various peaks that correlate with SiC polytypes, including 4H-SiC, 5H-SiC, 6H-SiC, and 15R-SiC, were detected in the laser-treated samples. − Two detected polytypes are commonly used in electronic devices (4H- and 6H-), and 15R-SiC is being studied due to its potential industrial applications. It turns out that the low field mobility in 15R-SiC is larger than that in 4H- and 6H-SiC, which makes this polytype an attractive material for the metal oxide–semiconductor field-effect transistors (MOSFETs). , …”

Boron-Related Defects in N-Type 4H-SiC Schottky Barrier Diodes

“…The ideality factor was extracted from the slope of the linear part of the semi-logarithmic I-V curve, and at 300 K, a value of ~1.01 was obtained. The forward I-V characteristics at temperatures below 200 K revealed two distinct regions separated by a kink that is attributed to the presence of a Schottky barrier inhomogeneity affected by surface defects, doping inhomogeneities, and local effects at the metal-semiconductor interface [13][14][15]. Barrier inhomogeneities result in the formation of The forward I-V characteristics at temperatures below 200 K revealed two distinct regions separated by a kink that is attributed to the presence of a Schottky barrier inhomogeneity affected by surface defects, doping inhomogeneities, and local effects at the metal-semiconductor interface [13][14][15].…”

“…The forward I-V characteristics at temperatures below 200 K revealed two distinct regions separated by a kink that is attributed to the presence of a Schottky barrier inhomogeneity affected by surface defects, doping inhomogeneities, and local effects at the metal-semiconductor interface [13][14][15]. Barrier inhomogeneities result in the formation of The forward I-V characteristics at temperatures below 200 K revealed two distinct regions separated by a kink that is attributed to the presence of a Schottky barrier inhomogeneity affected by surface defects, doping inhomogeneities, and local effects at the metal-semiconductor interface [13][14][15]. Barrier inhomogeneities result in the formation of multiple Schottky barrier heights, two for the studied diode, leading to deviations in the electrical performance of the diode visible through the formation of kinks.…”