The role of oxygen defects engineering via passivation of the Al2O3 interfacial layer for the direct growth of a graphene-silicon Schottky junction solar cell

Kim, Minjae; Kang, Kyung-Sik; Wang, Yue; Park, Sewon; Lee, Hong Sub; Roy, Sanjib Baran; Chun, Seung‐Hyun; Singh, Chabungbam Akendra; Jun, Seong Chan; Park, Hyung Ho

doi:10.1016/j.apmt.2021.101267

Cited by 12 publications

(7 citation statements)

References 50 publications

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“…The relative area ratios of lattice oxygen to defect oxygen ( O lattice / O defect or L o / D o ) within both the unannealed and vacuum-annealed Ta 2 O 5 were calculated. The L o / D o values of the unannealed and vacuum-annealed Ta 2 O 5 were 2.6 and 0.65, respectively. − The rapid increase in the value of the O II peaks after the 650 °C vacuum annealing confirmed the reduction of oxygen during the annealing process (Figure b). The O/Ta atomic ratio of the samples was calculated using the X-ray photoelectron spectroscopy (XPS) data as a function of the vacuum annealing temperature (Figure S5a).…”

Section: Resultsmentioning

confidence: 81%

Filamentary and Interface-Type Memristors Based on Tantalum Oxide for Energy-Efficient Neuromorphic Hardware

Kim

Lee

Wang

et al. 2022

ACS Appl. Mater. Interfaces

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To implement artificial neural networks (ANNs) based on memristor devices, it is essential to secure the linearity and symmetry in weight update characteristics of the memristor, and reliability in the cycle-to-cycle and device-to-device variations. This study experimentally demonstrated and compared the filamentary and interface-type resistive switching (RS) behaviors of tantalum oxide (Ta2O5 and TaO2)-based devices grown by atomic layer deposition (ALD) to propose a suitable RS type in terms of reliability and weight update characteristics. Although Ta2O5 is a strong candidate for memristor, the filament-type RS behavior of Ta2O5 does not fit well with ANNs demanding analog memory characteristics. Therefore, this study newly designed an interface-type TaO2 memristor and compared it to a filament type of Ta2O5 memristor to secure the weight update characteristics and reliability. The TaO2-based interface-type memristor exhibited gradual RS characteristics and area dependency in both high- and low-resistance states. In addition, compared to the filamentary memristor, the RS behaviors of the TaO2-based interface-type device exhibited higher suitability for the neuromorphic, symmetric, and linear long-term potentiation (LTP) and long-term depression (LTD). These findings suggest better types of memristors for implementing ionic memristor-based ANNs among the two types of RS mechanisms.

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Section: Resultsmentioning

confidence: 81%

Filamentary and Interface-Type Memristors Based on Tantalum Oxide for Energy-Efficient Neuromorphic Hardware

Kim

Lee

Wang

et al. 2022

ACS Appl. Mater. Interfaces

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“…11) Based on the direct-growth method, researchers have successively obtained Gr/Si solar cells with large active areas of 0.3 cm 2 , 0.32 cm 2 and 0.9 cm 2 . [12][13][14][15] Except for large-area, textured silicon structure is also a necessary condition for industrialization. The surface texturing of silicon can overcome the crucial problem of the high reflectivity of silicon, and the textured silicon is generally adopted by industrial Si-based photovoltaic devices.…”

Section: Introductionmentioning

confidence: 99%

Large-area 11.75% efficient vertical graphene nanowalls/textured silicon Schottky junction solar cell based on PEDOT:Nafion doping scheme

Cui

Liu²,

Jia³

et al. 2023

Jpn. J. Appl. Phys.

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Preparing large-area graphene onto textured silicon is necessary for the industrialization of graphene/silicon solar cells. However, many passivation films with insulating properties prepared by solution method are not applicable for the textured structures as the insulation areas are easy formed at the bottom of pyramid. In this paper, we prepared large-area vertical graphene nanowalls (VGNWs) on textured c-Si by plasma enhanced chemical vapor deposition (PECVD) and introduced conductive-passivating poly(3,4-ethylenedioxythiophene) (PEDOT):Nafion composite thin films to modify the textured VGNWs/Si Schottky junction. The formation of insulation areas was avoided. Moreover, the reflectivity was reduced to less than 7% as the superposition of textured structures and PEDOT:Nafion film. After applying an interfacial layer of Al2O3, the cell efficiency was increased to 11.75%, with a large active area of 0.64 cm2. This work will promote the industrialization of VGNWs/Si solar cells.

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“…Graphene/n-Si Schottky junction solar cells (GSSC) have attracted attention as a promising solar cell technology because of their low-cost fabrication and high-power conversion efficiency (PCE) [1][2][3][4][5][6][7][8]. The PCE of GSSCs has increased rapidly from approximately 1.5% in 2010 to around 15% in 2015, using various strategies such as hole doping, silicon surface passivation, and anti-reflection coating [9][10][11][12][13][14][15][16][17][18]. However, the PCE has plateaued in recent years, with only slight improvements observed.…”

Section: Introductionmentioning

confidence: 99%

Capacitance characterization of graphene/n-Si Schottky junction solar cell with MOS capacitor

Teraoka,

Ono,

2023

Mater. Res. Express

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We have demonstrated a simple and accurate method for characterizing the capacitance of Graphene/n-Si Schottky junction solar cells (GSSCs) which embed the metal-oxide-semiconductor (MOS) capacitor. We measured two types of GSSCs, one with thermal annealing treatments (w-a) and one without (wo-a). It was found that the wo-a GSSC exhibits a two-step feature in the phase versus forward bias voltage relationship, which may be attributed to the presence of polymethyl methacrylate residues. By considering the capacitance of the MOS capacitor (Cmos) and its standard deviation, we successfully obtained the capacitance of the Schottky junction (CSch), and evaluated meaningful built-in potentials (Schottky barrier heights) which are 0.51V (0.78eV) and 0.47V (0.75eV) for the w-a and wo-a GSSCs, respectively, by the Mott-Schottky analysis. We also briefly discuss the relationship between CSch and the Nyquist and Bode plots, finding that the RC time constant decreases due to the subtraction of Cmos.

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The role of oxygen defects engineering via passivation of the Al2O3 interfacial layer for the direct growth of a graphene-silicon Schottky junction solar cell

Cited by 12 publications

References 50 publications

Filamentary and Interface-Type Memristors Based on Tantalum Oxide for Energy-Efficient Neuromorphic Hardware

Filamentary and Interface-Type Memristors Based on Tantalum Oxide for Energy-Efficient Neuromorphic Hardware

Large-area 11.75% efficient vertical graphene nanowalls/textured silicon Schottky junction solar cell based on PEDOT:Nafion doping scheme

Capacitance characterization of graphene/n-Si Schottky junction solar cell with MOS capacitor

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