The Role of Precursor‐Decomposition Kinetics in Silicon‐Nanowire Synthesis in Organic Solvents

Lee, Dongkyu; Hanrath, Tobias; Korgel, Brian A.

doi:10.1002/anie.200463001

Cited by 84 publications

(85 citation statements)

References 32 publications

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“…Additionally, the SCF technique allows precise control of the deposition parameters by controlling the pressure and temperature conditions, fluid flow rates, etc. [157][158][160][161]. SCF deposition of semiconductor nanowires into porous templates can also be highly effective due to the low viscosity, negligible surface tension and good wetability of the fluid phase [162].…”

Section: Silicon and Germanium Nanostructures Within Paa Mtfs And Bcmentioning

confidence: 99%

Self-assembled templates for the generation of arrays of 1-dimensional nanostructures: From molecules to devices

Farrell

Petkov²,

Morris

et al. 2010

Journal of Colloid and Interface Science

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Self-assembled nanoscale porous architectures, such as mesoporous silica films (MPS), block copolymer films (BCP) and porous anodic aluminas (PAAs), are ideal hosts for templating one dimension (1 D) nano-entities for a wide range of electronic, photonic, magnetic and environmental applications. All three templates offer dimensional scalability and tunability over a wide range, with critical pore sizes for each system well below the 20 nm threshold [1][2][3]. Recently, research has progressed towards controlling the pore direction, orientation and long range order of these nanostructures through so called directed self-assembly (DSA). Significantly, the introduction of a wide range of top-down chemically and physically pre-patterning substrates has facilitated the DSA of nanostructures into functional device arrays. The following review begins with an overview of the fundamental aspects of self-assembly and ordering processes during the formation of PAAs, BCPs and MPS films. Special attention is given to the different ways of directing self-assembly, concentrating on properties such as uni-directional alignment, precision placement and registry of the self-assembled structures to hierarchal or top down architectures. Finally, to distinguish this review from other articles we focus on research where nanostructures have been utilised in part to fabricate arrays of functioning devices below the sub 50 nm threshold, by subtractive transfer and additive methods. Where possible, we attempt to compare and contrast the different templating approaches and highlight the strengths and/or limitations that will be important for their potential integration into downstream processes. ACCEPTED MANUSCRIPT 3 SECTION 1.0: SELF ASSEMBLY AND NANO-ARCHITETCURESThe diversity of self-assembled nanostructures and more importantly, their precise orientation within a thin film (fixed to a substrate) ultimately determines their function and overall application. A large population of research reports to date have focused on identifying these orientations and related periodicities, using x-ray and microscopy tools, as well the development of methods for readily manipulating nanostructures, such as pre-patterning of silicon substrates for the alignment of block copolymers (BCPs) [4] and mesoporous thin films (MTFs) [5] and altering the growth direction of porous anodic alumina (PAA) templates [6]. In this section, a brief synopsis of the mechanisms behind the self-assembly/organisation of each system and highlight nanoscale architectures (and orientations), which are important from a device perspective. Templated mesoporous thin filmsOrdered mesoporous powders were first discovered by researchers at the Mobil Petrochemical Corporation in 1992 and shortly after, sol-gel derived mesoporous silica films were fabricated [1,7].The first series of ordered mesoporous films were reported by Yang et al. in 1996 [8], prepared using initial surfactant concentrations above their critical micelle concentration (CMC). However the films prepared fil...

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Section: Silicon and Germanium Nanostructures Within Paa Mtfs And Bcmentioning

confidence: 99%

Self-assembled templates for the generation of arrays of 1-dimensional nanostructures: From molecules to devices

Farrell

Petkov²,

Morris

et al. 2010

Journal of Colloid and Interface Science

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“…This result is different from that for Au-seeded Si and Ge nanowires in organic solvents, which show preferential growth in either the h111i (Si) or h110i (Ge) directions, with only a small proportion of h110i (or h111i) and h112i orientations. [22,29] Perhaps the difference in nanowire growth direction relates to the solid-phase nanowire seeding process. However, it is noteworthy that regardless of the metal used to seed the nanowires (i.e., Au, Ni, or Co.), h112i-oriented nanowires always tend to have longitudinal {111} twins, as in the wires in Figure 3 c and f. In VLS growth, the metal seed dissolves the semiconductor and recrystallizes it as a nanowire and has a passive role in the precursor decomposition chemistry.…”

mentioning

confidence: 99%

“…[21,22] Under these reaction conditions, Au nanocrystals seed nanowires by the "supercritical fluid-liquid-solid" (SFLS) mechanism in which nanowires evolve from a liquid Au:Si (or Au:Ge) eutectic. In combination with Si and Ge, many of the seed materials studied herein do not form liquid eutectics until reaching temperatures well above 500 8C, and are not expected to work for "VLS"-like growth.…”

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confidence: 99%

Nanocrystal‐Mediated Crystallization of Silicon and Germanium Nanowires in Organic Solvents: The Role of Catalysis and Solid‐Phase Seeding

2006

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“…Other alternative reactants, such as the alkylsilane and octylsilane, do not yield Si nanowires in the SFLS process in the presence of gold nanocrystals. 53 However, these reactants that do not yield nanowires in the presence of Au, yield Si nanowires when Ni or Co nanocrystals are used as seeds.…”

Section: 53557071mentioning

confidence: 99%

Semiconductor Nanowires

Korgel

2005

Encyclopedia of Inorganic Chemistry

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This review provides an overview of the synthesis, structural and chemical properties, and assembly and processing strategies of semiconductor nanowires. Vapor–liquid–solid (VLS), solution–liquid–solid (SLS), supercritical fluid–liquid–solid (SFLS) approaches that rely on the formation of a liquid metal–semiconductor eutectic to seed nanowire growth are covered. Nanowire growth from metal seed particles in the solid phase are also discussed, as well as chemical methods that rely on surfactants, self‐assembly, and directed crystallization processes. Structural details about the nanowires, including the crystallographic growth direction, common extended defects, and surface faceting are discussed. Routes to surface passivation by organic monolayers and compositional control of impurity doping and heterostructures—radial and axial—are presented, as well as more structurally complicated branched nanowire structures. Finally, an overview of nanowire processing and manipulation is offered, with a discussion about positioned growth, self‐assembly, and the potential impact of impurities on applications.

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The Role of Precursor‐Decomposition Kinetics in Silicon‐Nanowire Synthesis in Organic Solvents

Cited by 84 publications

References 32 publications

Self-assembled templates for the generation of arrays of 1-dimensional nanostructures: From molecules to devices

Self-assembled templates for the generation of arrays of 1-dimensional nanostructures: From molecules to devices

Nanocrystal‐Mediated Crystallization of Silicon and Germanium Nanowires in Organic Solvents: The Role of Catalysis and Solid‐Phase Seeding

Semiconductor Nanowires

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