The role of size effects on the crystallization of amorphous Ge in contact with Bi nanocrystals

Abstract

Transmission electron microscopy of the amorphization of copper indium diselenide by in situ ion irradiation J. Appl. Phys. 111, 053510 (2012) Diffusion-controlled formation mechanism of dual-phase structure during Al induced crystallization of SiGe Appl. Phys. Lett. 100, 071908 (2012) Local structure of nitrogen in N-doped amorphous and crystalline GeTe Appl. Phys. Lett. 100, 061910 (2012) Facile creation of bio-inspired superhydrophobic Ce-based metallic glass surfaces Appl. Phys. Lett. 99, 261905 (2011) How does spallation microdamage nucleate in bulk amorphous alloys under shock loading? J. Appl. Phys. 110, 103519 (2011) Additional information on J. Appl. Phys. ͑Received 1 June 1998; accepted for publication 31 July 1998͒The kinetics of metal-induced crystallization of amorphous Ge in contact with Bi nanocrystals ͑NCs͒ have been studied by in situ transmission electron microscope annealing. Series of nanostructured films consisting of layers of Bi NCs in an amorphous Ge matrix have been grown by pulsed laser deposition. The a-Ge crystallization temperature depends strongly on both the size and shape of the NCs and the separation between the NCs in the film-normal direction. The size of the NCs controls the crystal nucleation process through the amount of metal surface in contact with the semiconductor, the shape of the NCs determines the initial Ge crystallization in the direction perpendicular to the film plane, and the separation between the NCs in the film-normal direction controls the overall pattern of the Ge crystal growth process.

Thermally driven optical switching in Bi nanostructures

“…The technological interest in nanostructured materials relies on their particular optical, mechanical or magnetic properties. However, although less studied, these systems have also interesting thermal characteristics [1]. Moreover, combined investigations by thermal and optical means have scarcely been conducted, and then only for a few systems [2][3][4].…”

“…Bismuth is a semimetal, and like Ga, it has a relatively low melting point (574 K) which makes it attractive for thermally 1 Permanent address: Departamento de Física, Universidad Autónoma Metropolitana Iztapalapa, Apartado Postal 55-534, México 09340, DF, Mexico. induced phase transformations, as they can be triggered at low temperatures.…”

Structural and thermal properties of a Bi nano-plane embedded in amorphous germanium

“…1, a Raman peak near 300 cm -1 characteristic of crystalline germanium. This effect of recrystallization of Ge at low temperature has been widely studied and is known as metal induced crystallization [9][10][11]. On the last spectrum taken after decreasing the temperature to 389 K, the peak characterizing the crystalline bismuth reappear indicating the solidification of the material.…”

“…Furthermore, we have detected the crystallization of the amorphous Ge matrix above the Bi plane. This phenomenon is known as metal induced crystallization (MIC) and has been investigated in a variety of situations [9,10,11].…”

Structure and thermal stability of Fe : Al2O3 nanocomposite films

“…Many techniques can be employed to fabricate nanocomposite films, such as sol-gel [13], sputtering [4,10] and ion implantation [14]. Pulsed laser deposition (PLD) is a more recently developed thin film technique that has been used to prepare high quality nanocomposite films for optical applications [9,15,16]. The use of alternate PLD from separate matrix and metal targets has proved to be advantageous.…”