We use molecular dynamics (MD)

Hexagonal boron nitride (hBN) thin films were grown by plasma-enhanced chemical beam epitaxy (PE-CBE) on epitaxial graphene (EG) on macrostepped 4°-offcut 4H-SiC(0001) substrates. The choice of growth conditions in this system allowed for two prominent in-plane hBN/EG rotational alignments: a direct alignment of the hBN and EG lattices or a 30° in-plane rotational twist such that the ⟨112¯0⟩hBN and ⟨101¯0⟩EG directions are parallel. The use of nitrogen plasma in conjunction with borazine at growth temperatures of 1450 °C increased the crystallinity of the few-monolayer-thick films relative to films grown by CBE without plasma exposure. In vacuo x-ray photoelectron spectroscopy showed that films grown with nitrogen plasma exposure were stoichiometric to nitrogen-rich, depending on growth conditions, and exhibited no bonding indicative of additional phase formation. This PE-CBE process was shown to produce films with atomically abrupt interfaces between the hBN and EG lattices, as determined by cross-sectional transmission electron microscopy (TEM). Annular dark field and bright field scanning TEM paired with energy dispersive x-ray spectroscopy confirmed that the EG persisted throughout this deposition and no intercalative growth of hBN under the EG was detected. Higher PE-CBE growth rates produced hBN domains that nucleated uniformly across the substrate with little preferred orientation of their edges. In comparison, lower growth rates appeared to cause preferential nucleation on the macrostep edges with a 30° in-plane rotation relative to the EG, as confirmed by cross-sectional TEM. By correlating the hBN nuclei shape in AFM to the atomic registry of the hBN to the substrate, it was found that the triangular, macrostep-edge nuclei were arm-chair edge terminated. The ability to select different rotational alignments by changing epitaxial growth conditions may be used in future wafer-scale growth of hBN/graphene heterostructures to achieve varying degrees of graphene band structure modulation.

The valence-band offsets, ΔEv, between semiconducting half-Heusler compound CoTiSb and lattice-matched III-V In0.53Ga0.47As and In0.52Al0.48As heterojunction interfaces have been measured using X-ray photoemission spectroscopy (XPS). These interfaces were formed using molecular beam epitaxy and transferred in situ for XPS measurements. Valence-band offsets of 0.30 eV and 0.58 eV were measured for CoTiSb/In0.53Ga0.47As and CoTiSb/In0.52Al0.48As, respectively. By combining these measurements with previously reported XPS ΔEv (In0.53Ga0.47As/In0.52Al0.48As) data, the results suggest that band offset transitivity is satisfied. In addition, the film growth order of the interface between CoTiSb and In0.53Ga0.47As is explored and does not seem to affect the band offsets. Finally, the band alignments of CoTiSb with GaAs, AlAs, and InAs are calculated using the density function theory with the HSE06 hybrid functional and applied to predict the band alignment of CoTiSb with In0.53Ga0.47As and In0.52Al0.48As. Good agreement is found between the calculated valence-band offsets and those determined from XPS.

Transmission electron microscopy of the amorphization of copper indium diselenide by in situ ion irradiation J. Appl. Phys. 111, 053510 (2012) Diffusion-controlled formation mechanism of dual-phase structure during Al induced crystallization of SiGe Appl. Phys. Lett. 100, 071908 (2012) Local structure of nitrogen in N-doped amorphous and crystalline GeTe Appl. Phys. Lett. 100, 061910 (2012) Facile creation of bio-inspired superhydrophobic Ce-based metallic glass surfaces Appl. Phys. Lett. 99, 261905 (2011) How does spallation microdamage nucleate in bulk amorphous alloys under shock loading? J. Appl. Phys. 110, 103519 (2011) Additional information on J. Appl. Phys. ͑Received 1 June 1998; accepted for publication 31 July 1998͒The kinetics of metal-induced crystallization of amorphous Ge in contact with Bi nanocrystals ͑NCs͒ have been studied by in situ transmission electron microscope annealing. Series of nanostructured films consisting of layers of Bi NCs in an amorphous Ge matrix have been grown by pulsed laser deposition. The a-Ge crystallization temperature depends strongly on both the size and shape of the NCs and the separation between the NCs in the film-normal direction. The size of the NCs controls the crystal nucleation process through the amount of metal surface in contact with the semiconductor, the shape of the NCs determines the initial Ge crystallization in the direction perpendicular to the film plane, and the separation between the NCs in the film-normal direction controls the overall pattern of the Ge crystal growth process.

Scaling down material synthesis to crystalline structures only few atoms in size and precisely positioned in device configurations remains highly challenging, but is crucial for new applications e.g., in quantum computing. We propose to use the sidewall facets of larger III–V semiconductor nanowires (NWs), with controllable axial stacking of different crystal phases, as templates for site-selective growth of ordered few atoms 1D and 2D structures. We demonstrate this concept of self-selective growth by Bi deposition and incorporation into the surfaces of GaAs NWs to form GaBi structures. Using low temperature scanning tunneling microscopy (STM), we observe the crystal structure dependent self-selective growth process, where ordered 1D GaBi atomic chains and 2D islands are alloyed into surfaces of the wurtzite (Wz) $$\{11{\bar{2}}0\}$$ { 11 2 ¯ 0 } crystal facets. The formation and lateral extension of these surface structures are controlled by the crystal structure and surface morphology uniquely found in NWs. This allows versatile high precision design of structures with predicted novel topological nature, by using the ability of NW heterostructure variations over orders of magnitude in dimensions with atomic-scale precision as well as controllably positioning in larger device structures.