Majorana zero-modes-a type of localized quasiparticle-hold great promise for topological quantum computing. Tunnelling spectroscopy in electrical transport is the primary tool for identifying the presence of Majorana zero-modes, for instance as a zero-bias peak in differential conductance. The height of the Majorana zero-bias peak is predicted to be quantized at the universal conductance value of 2e/h at zero temperature (where e is the charge of an electron and h is the Planck constant), as a direct consequence of the famous Majorana symmetry in which a particle is its own antiparticle. The Majorana symmetry protects the quantization against disorder, interactions and variations in the tunnel coupling. Previous experiments, however, have mostly shown zero-bias peaks much smaller than 2e/h, with a recent observation of a peak height close to 2e/h. Here we report a quantized conductance plateau at 2e/h in the zero-bias conductance measured in indium antimonide semiconductor nanowires covered with an aluminium superconducting shell. The height of our zero-bias peak remains constant despite changing parameters such as the magnetic field and tunnel coupling, indicating that it is a quantized conductance plateau. We distinguish this quantized Majorana peak from possible non-Majorana origins by investigating its robustness to electric and magnetic fields as well as its temperature dependence. The observation of a quantized conductance plateau strongly supports the existence of Majorana zero-modes in the system, consequently paving the way for future braiding experiments that could lead to topological quantum computing.

Semiconductor nanowires provide an ideal platform for various low-dimensional quantum devices. In particular, topological phases of matter hosting non-Abelian quasiparticles can emerge when a semiconductor nanowire with strong spin-orbit coupling is brought in contact with a superconductor 1,2 . To fully exploit the potential of non-Abelian anyons for topological quantum computing, they need to be exchanged in a wellcontrolled braiding operation 3-8 . Essential hardware for braiding is a network of singlecrystalline nanowires coupled to superconducting islands. Here, we demonstrate a technique for generic bottom-up synthesis of complex quantum devices with a special focus on nanowire networks having a predefined number of superconducting islands.Structural analysis confirms the high crystalline quality of the nanowire junctions, as well as an epitaxial superconductor-semiconductor interface. Quantum transport measurements of nanowire "hashtags" reveal Aharonov-Bohm and weak-antilocalization effects, indicating a phase coherent system with strong spin-orbit coupling. In addition, a 2 proximity-induced hard superconducting gap is demonstrated in these hybrid superconductor-semiconductor nanowires, highlighting the successful materials development necessary for a first braiding experiment. Our approach opens new avenues for the realization of epitaxial 3-dimensional quantum device architectures.Majorana Zero Modes (MZMs) are predicted to emerge once a superconductor (SC) is coupled to a semiconductor nanowire (NW) with a strong spin-orbit interaction (SOI) in an external magnetic field 1,2 . InSb NWs are a prime choice for this application due to the large Landé g-factor (~50) and strong Rashba SOI 9 , crucial for realization of MZMs. In addition, InSb nanowires generally show high mobility and ballistic transport [10][11][12] . Indeed, signatures of Majorana zero modes (MZMs) have been detected in hybrid superconductor-semiconductor InSb and InAs NW systems 11,[13][14][15] . Multiple schemes for topological quantum computing based on braiding of MZMs have been reported, all employing hybrid NW networks 3-8 .Top-down fabrication of InSb NW networks is an attractive route towards scalability 16 , however, the large lattice mismatch between InSb and insulating growth substrates limits the crystal quality. An alternative approach is bottom-up synthesis of out-of-plane NW networks which, due to their large surface-to-volume ratio, effectively relieve strain on their sidewalls, enabling the growth of single-crystalline NWs on highly lattice-mismatched substrates [17][18][19] .Recently, different schemes have been reported for merging NWs into networks [20][21][22] .Unfortunately, these structures are either not single-crystalline, due to a mismatch of the crystal structure of the wires with that of the substrate (i.e. hexagonal NWs on a cubic substrate) 22 , or the yield is low due to the limited control over the multiple accessible growth directions (the yield decreases with the number of junctions in the network) 23 ....

We report on the selective-area chemical beam epitaxial growth of InAs in-plane, one-dimensional (1-D) channels using patterned SiO 2 -coated InP(001), InP(111)B, and InP(110) substrates to establish a scalable platform for topological superconductor networks. Top-view scanning electron micrographs show excellent surface selectivity and dependence of major facet planes on the substrate orientations and ridge directions, and the ratios of the surface energies of the major facet planes were estimated. Detailed structural properties and defects in the InAs nanowires (NWs) were characterized by transmission electron microscopic analysis of cross-sections perpendicular to the NW ridge direction and along the NW ridge direction. Electrical transport properties of the InAs NWs were investigated using Hall bars, a field effect mobility device, a quantum dot, and an Aharonov-Bohm loop device, which reflect the strong spin-orbit interaction and phase-coherent transport characteristic in the selectively grown InAs systems.This study demonstrates that selective-area chemical beam epitaxy is a scalable approach to realize semiconductor 1-D channel networks with the excellent surface selectivity and this material system is suitable for quantum transport studies.

We demonstrate controlled growth of face-centered cubic (FCC), monodisperse hard-sphere colloidal crystals by centrifugation at up to 3000g onto FCC (100) templates. Such rapid deposition rates often result in an amorphous sediment. Surprisingly, however, growth onto (100) templates results only in single crystals with few or no extended defects. By contrast, deposition onto flat, (111), or (110) templates causes rapid disordering to an amorphous sediment if the dimensionless flux (particle volume fraction  Peclet number) exceeds a critical value. This crystalline-to-amorphous crossover results from the degeneracy of possible stacking positions for these orientations. No such degeneracy exists for growth onto (100). After growth, extended defects can nucleate and grow only if the crystal exceeds a critical thickness that depends on the lattice misfit with the template spacing. The experimental observations of the density of misfit dislocations are accounted for by the Frank-van der Merwe theory, adapted for the depth-dependent variation of lattice spacing and elastic constants that results from the gravitational pressure.

We have measured the spin injection efficiency and spin lifetime in Co2FeSi/n-GaAs lateral nonlocal spin valves from 20 to 300 K. We observe large (∼40 µV) spin valve signals at room temperature and injector currents of 10 3 A/cm 2 , facilitated by fabricating spin valve separations smaller than the 1 µm spin diffusion length and applying a forward bias to the detector contact. The spin transport parameters are measured by comparing the injector-detector contact separation dependence of the spin valve signal with a numerical model accounting for spin drift and diffusion. The apparent suppression of the spin injection efficiency at the lowest temperatures reflects a breakdown of the ordinary drift-diffusion model in the regime of large spin accumulation. A theoretical calculation of the D'yakonov-Perel spin lifetime agrees well with the measured n-GaAs spin lifetime over the entire temperature range. arXiv:1610.03797v1 [cond-mat.mes-hall]