2016
DOI: 10.1016/j.snb.2016.03.079
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The role of surface electron accumulation and bulk doping for gas-sensing explored with single-crystalline In2O3 thin films

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Cited by 45 publications
(64 citation statements)
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“…The structural properties of the investigated In 2 O 3 film are summarized in Figure : The symmetric out‐of‐plane XRD 2θ‐ω scan in Figure a shows the sole presence of different diffraction orders of (111) lattice planes of the yttrium‐stabilized zirconia (YSZ) substrate and the In 2 O 3 film. In agreement with our previous work showing the cube‐on‐cube relation of the In 2 O 3 film to the YSZ(111) substrate, this confirms the single‐crystalline nature of the investigated In 2 O 3 (111) film. The ω rocking curve shown in Figure b has a full‐width at half maximum of 0.15°, indicating a low degree of tilt mosaic, which suggests a comparably high crystalline quality for a heteroepitaxial film.…”
Section: Resultsmentioning
confidence: 99%
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“…The structural properties of the investigated In 2 O 3 film are summarized in Figure : The symmetric out‐of‐plane XRD 2θ‐ω scan in Figure a shows the sole presence of different diffraction orders of (111) lattice planes of the yttrium‐stabilized zirconia (YSZ) substrate and the In 2 O 3 film. In agreement with our previous work showing the cube‐on‐cube relation of the In 2 O 3 film to the YSZ(111) substrate, this confirms the single‐crystalline nature of the investigated In 2 O 3 (111) film. The ω rocking curve shown in Figure b has a full‐width at half maximum of 0.15°, indicating a low degree of tilt mosaic, which suggests a comparably high crystalline quality for a heteroepitaxial film.…”
Section: Resultsmentioning
confidence: 99%
“…This process was similar to the growth recipe described in ref. . Structural and electronic transport properties of the film were also investigated as described in ref.…”
Section: Methodsmentioning
confidence: 99%
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“…For this purpose, flat, epitaxial In 2 O 3 (111) films are characterized as model system. While the conductometric gas response is smaller than in optimized polycrystalline films our approach removes the complexity of grain boundaries from the problem . In this study, we investigate changes in surface properties by gas adsorption measured by X‐ray and ultraviolet photoelectron spectroscopy (XPS and UPS).…”
Section: Introductionmentioning
confidence: 99%
“…Second, the good gas sensing for NO x of the In 2 O 3 sensor can be ascribed to the single crystal In 2 O 3 and its own nanosheet structure which have a benecial effect on the performance of the In 2 O 3 sensor. 47,48 The ideal structure is considered to be single crystal, because such gas sensing materials can exhibit high electron conductivities, and have abundant interfacial active sites and excellent stability. 49,50 When the porous coupled with single crystallinity provides for the ease of gas diffusion and more active sites for the formation of reactive oxygen species.…”
Section: Gas Sensing Performances and Sensing Mechanismmentioning
confidence: 99%