The Role of Surface Oxygen in the Growth of Large Single-Crystal Graphene on Copper

Hao, Yufeng; Bharathi, M. S.; Wang, Lei; Liu, Yuanyue; Chen, Hua; Nie, Shu; Wang, Xiaohan; Chou, Harry; Tan, Cheng; Fallahazad, Babak; Hariharaputran, Ramanarayan; Magnuson, Carl W.; Tutuc, Emanuel; Yakobson, Boris I.; McCarty, Kevin F.; Zhang, Yong‐Wei; Kim, Philip; Hone, James; Colombo, Luigi; Ruoff, Rodney S.

doi:10.1126/science.1243879

Cited by 1,035 publications

(1,277 citation statements)

References 43 publications

Supporting

Mentioning

1,206

Contrasting

Unclassified

Order By: Relevance

“…It is likely that the large graphene domain size obtained from peeled-off catalyst reflects a smaller density of nucleation sites for graphene crystal growth on this nearly ideal copper catalyst. 27 This suggests that further improvements in catalyst preparation might lead to yet larger average domain sizes, a topic of ongoing effort in our laboratory. Figure 4a shows Raman spectra of both peeled-off and reference graphene.…”

Section: Articlementioning

confidence: 99%

Chemical Vapor Deposition of Graphene on a “Peeled-Off” Epitaxial Cu(111) Foil: A Simple Approach to Improved Properties

Balasubramanian

Kim

et al. 2014

ACS Nano

View full text Add to dashboard Cite

We present a simple approach to improving the quality of CVD grown graphene, exploiting a Cu(111) foil catalyst. The catalyst is epitaxially grown by evaporation on a single crystal sapphire substrate, thickened by electroplating, and peeled off. The exposed surface is atomically flat, easily reduced, and exclusively of (111) orientation. Graphene grown on this catalyst under atmospheric CVD conditions and without wet chemical prereduction produces single crystal domain sizes of several hundred micrometers in samples that are many centimeters in size. The graphene produced in this way can easily be transferred to other substrates using well-established techniques. We report mobilities extracted using field-effect (as high as 29 000 cm2 V–1 s–1) and Hall bar measurement (up to 10 100 cm2 V–1 s–1).

show abstract

Section: Articlementioning

confidence: 99%

Chemical Vapor Deposition of Graphene on a “Peeled-Off” Epitaxial Cu(111) Foil: A Simple Approach to Improved Properties

Balasubramanian

Kim

et al. 2014

ACS Nano

View full text Add to dashboard Cite

show abstract

“…Recently, a centimeter‐sized single‐crystalline graphene was obtained from a single nucleus 105. Another way is to grow graphene on a single‐crystalline substrate where multiple nucleations of the graphene domains could take place with perfect rotational alignment.…”

Section: Catalyst‐free Direct Cvd Growth Of Graphene On Technologicalmentioning

confidence: 99%

Direct CVD Growth of Graphene on Technologically Important Dielectric and Semiconducting Substrates

et al. 2018

View full text Add to dashboard Cite

To fabricate graphene based electronic and optoelectronic devices, it is highly desirable to develop a variety of metal‐catalyst free chemical vapor deposition (CVD) techniques for direct synthesis of graphene on dielectric and semiconducting substrates. This will help to avoid metallic impurities, high costs, time consuming processes, and defect‐inducing graphene transfer processes. Direct CVD growth of graphene on dielectric substrates is usually difficult to accomplish due to their low surface energy. However, a low‐temperature plasma enhanced CVD technique could help to solve this problem. Here, the recent progress of metal‐catalyst free direct CVD growth of graphene on technologically important dielectric (SiO2, ZrO2, HfO2, h‐BN, Al2O3, Si3N4, quartz, MgO, SrTiO3, TiO2, etc.) and semiconducting (Si, Ge, GaN, and SiC) substrates is reviewed. High and low temperature direct CVD growth of graphene on these substrates including growth mechanism and morphology is discussed. Detailed discussions are also presented for Si and Ge substrates, which are necessary for next generation graphene/Si/Ge based hybrid electronic devices. Finally, the technology development of the metal‐catalyst free direct CVD growth of graphene on these substrates is concluded, with future outlooks.

show abstract

“…Graphene domain size versus growth rate on Cu foil in 2009–2016 31, 32, 33, 34, 35, 36, 37, 38, 39, 40, 41, 42, 43, 44, 45, 46, 47, 48, 49, 50, 51, 52, 53, 54…”

Section: The Merits Of Ultrafast Graphene Growthmentioning

confidence: 99%

“…The growth of large‐area high‐quality graphene films is fundamental for the upcoming graphene applications. Chemical vapour deposition (CVD) method offers good prospects to produce large‐size graphene films due to its simplicity, controllability and cost‐efficiency 13, 14, 15, 16, 17, 18, 19, 20, 21, 22, 23, 24, 25, 26, 27, 28, 29, 30, 31, 32, 33, 34, 35, 36, 37, 38, 39, 40, 41, 42, 43, 44, 45, 46, 47, 48, 49, 50, 51, 52, 53, 54, 55, 56, 57, 58, 59, 60, 61, 62, 63, 64, 65, 66, 67, 68, 69, 70, 71, 72, 73, 74, 75. Many researches have verified that graphene can be catalytically grown on metallic substrates, like ruthenium (Ru),13, 14 iridium (Ir),15, 16 platinum (Pt),17, 18, …”

Section: Introductionmentioning

confidence: 99%

The Way towards Ultrafast Growth of Single‐Crystal Graphene on Copper

Zhang

Qiu

et al. 2017

Advanced Science

View full text Add to dashboard Cite

The exceptional properties of graphene make it a promising candidate in the development of next‐generation electronic, optoelectronic, photonic and photovoltaic devices. A holy grail in graphene research is the synthesis of large‐sized single‐crystal graphene, in which the absence of grain boundaries guarantees its excellent intrinsic properties and high performance in the devices. Nowadays, most attention has been drawn to the suppression of nucleation density by using low feeding gas during the growth process to allow only one nucleus to grow with enough space. However, because the nucleation is a random event and new nuclei are likely to form in the very long growth process, it is difficult to achieve industrial‐level wafer‐scale or beyond (e.g. 30 cm in diameter) single‐crystal graphene. Another possible way to obtain large single‐crystal graphene is to realize ultrafast growth, where once a nucleus forms, it grows up so quickly before new nuclei form. Therefore ultrafast growth provides a new direction for the synthesis of large single‐crystal graphene, and is also of great significance to realize large‐scale production of graphene films (fast growth is more time‐efficient and cost‐effective), which is likely to accelerate various graphene applications in industry.

show abstract

The Role of Surface Oxygen in the Growth of Large Single-Crystal Graphene on Copper

Cited by 1,035 publications

References 43 publications

Chemical Vapor Deposition of Graphene on a “Peeled-Off” Epitaxial Cu(111) Foil: A Simple Approach to Improved Properties

Chemical Vapor Deposition of Graphene on a “Peeled-Off” Epitaxial Cu(111) Foil: A Simple Approach to Improved Properties

Direct CVD Growth of Graphene on Technologically Important Dielectric and Semiconducting Substrates

The Way towards Ultrafast Growth of Single‐Crystal Graphene on Copper

Contact Info

Product

Resources

About