2019
DOI: 10.1063/1.5059381
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The role of the disordered HfO2 network in the high-κ n-MOSFET shallow electron trapping

Abstract: Current understanding of the bias temperature instability degradation usually comprises two parts: (1) shallow-level component that can recover within a short time and (2) deep level traps that the emission time of the trapped carrier is extremely long. Prevenient studies of the positive bias temperature instability degradation in the high-κ n-MOSFET indicate that oxygen vacancy (V O ) is the dominant defect type that responds for the shallow electron trapping. However, recent experimental results reveal that … Show more

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“…After the first step, the leakage current of each individual SERS substrate was further programmed to the preset I C of 1 × 10 –7 A, 1 × 10 –5 A, 1 × 10 –3 A, respectively (inset of Figure a). During the entire two-stage electric field programming periods, the O atom of the weak W–O bond was considered to be outstretched away from its lattice site when the electric field gradually increased in the oxide, leaving the oxygen vacancies behind . The continuous accumulation of the oxygen vacancies along the oxide ultimately induced the dielectric breakdown, which brought the current to the compliance of 1 × 10 –7 A, 1 × 10 –5 A, and 1 × 10 –3 A, respectively.…”
Section: Resultsmentioning
confidence: 99%
“…After the first step, the leakage current of each individual SERS substrate was further programmed to the preset I C of 1 × 10 –7 A, 1 × 10 –5 A, 1 × 10 –3 A, respectively (inset of Figure a). During the entire two-stage electric field programming periods, the O atom of the weak W–O bond was considered to be outstretched away from its lattice site when the electric field gradually increased in the oxide, leaving the oxygen vacancies behind . The continuous accumulation of the oxygen vacancies along the oxide ultimately induced the dielectric breakdown, which brought the current to the compliance of 1 × 10 –7 A, 1 × 10 –5 A, and 1 × 10 –3 A, respectively.…”
Section: Resultsmentioning
confidence: 99%