“…There are dangling-bond defects in a-Si:H, but there may be two kinds of defects in a-C:H. 10 As carbon may form both and bonding, it is possible to have both and defects in a-C:H. The defects are expected to be easily created under an external treatment because the bonding is weak. So, careful attention is needed to apply the models of a-Si:H to a-C:H. In spite of the differences between them, however, many of the basic properties of a-C:H, such as amorphous state, imperfect tetrahedral bonding, and the relaxation of structure by hydrogens, etc., are similar to those of a-Si:H. 11 So, we can borrow some concepts of a-Si:H to interpret the data of a-C:H.…”