The S concentration dependence of lattice parameters and optical band gap of a-plane ZnOS grown epitaxially on r-plane sapphire

Li, Mingkai; Ding, Yali; Liu, Panke; Fang, Long; Li, Lei; Zhang, Wei; Zhang, Lei; He, Yunbin

doi:10.1016/j.jallcom.2015.01.022

Cited by 14 publications

(3 citation statements)

References 31 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…The band gap dependence of the β-Ga 2 O 3 :Al crystals on the Al 3+ composition is plotted in Figure S3 and the relationship can be expressed as E g = 4.75 + 0.82 x + 11.9 x 2 (eV). This experimental phenomenon suggests that the band gap of β-Ga 2 O 3 single crystals can be increased significantly by Al 3+ doping, which is consistent with the results of the previous experiments and theoretical calculations. ,, Similar to other materials, − the band gap increases with the decrease of the lattice parameters, which may be one of the reasons for the larger band gap. Figure d shows the valence band (VB) spectra of the β-Ga 2 O 3 crystals.…”

Section: Results and Discussionsupporting

confidence: 88%

Band Gap Engineering in β-Ga₂O₃ for a High-Performance X-ray Detector

Chen

Tang

et al. 2021

ACS Appl. Electron. Mater.

View full text Add to dashboard Cite

Gallium oxide (Ga2O3) attracts great attention in the field of X-ray detection because of its ultrawide band gap, high breakdown electric field, and high X-ray absorption coefficient. However, unintentionally doped Ga2O3 tends to have low resistivity because of the shallow donors provided by unintentionally doped impurity elements or intrinsic defects. Iron and magnesium ion doping can increase the resistivity of β-Ga2O3, but the carrier drift length and carrier collection efficiency are greatly reduced because of the introduction of deep-level impurities. Here, Al-doped β-Ga2O3 (β-Ga2O3:Al) single crystals with high resistivity are obtained through band gap engineering. The mechanism by which Al3+ doping can increase the resistivity of the β-Ga2O3 crystal is discussed. A β-Ga2O3:15%Al-based X-ray detector with high resistivity and quality is prepared. The detector demonstrates a high sensitivity of 851.6 μC Gyair –1 cm–2, which is 42 times higher than that of the commercial amorphous Se X-ray detector. Furthermore, the detector exhibits a fast response speed and both rise time and decay time of less than 0.05 s. The high performance of the detector is attributed to the high resistivity and high quality of the crystal. This work presents a method to obtain high-performance X-ray detectors based on β-Ga2O3 single crystals through band gap engineering.

show abstract

Section: Results and Discussionsupporting

confidence: 88%

Band Gap Engineering in β-Ga₂O₃ for a High-Performance X-ray Detector

Chen

Tang

et al. 2021

ACS Appl. Electron. Mater.

View full text Add to dashboard Cite

show abstract

“…Furthermore, with the increase in X n , the (100) and (002) diffraction peaks shift from 31.76° to 31.91° and from 34.42° to 34.61°, respectively. These lattice contractions in the a-axis and c-axis, which are distinct from those in the one-pot thermolysis of metal slats in our previous report21, are further confirmed by lattice geometry equations and Bragg’s law22232425 as follows:…”

Section: Resultssupporting

confidence: 82%

Rapid and High-Efficiency Laser-Alloying Formation of ZnMgO Nanocrystals

Liu

Wang

et al. 2016

Sci Rep

View full text Add to dashboard Cite

Applications of ZnMgO nanocrystals (NCs), especially in photoelectric detectors, have significant limitations because of the unresolved phase separation in the synthesis process. Here, we propose a rapid and highly efficient ZnMgO NC alloying method based on pulsed laser ablation in liquid. The limit value of homogeneous magnesium (Mg) is pushed from 37% to 62%, and the optical band gap is increased to 3.7 eV with high doping efficiency (>100%). Further investigations on the lattice geometry of ZnMgO NCs indicate that all ZnMgO NCs are hexagonal wurtzite structures, and the (002) and (100) peaks shift to higher diffraction angles with the increase in Mg doping content. The calculated results of the lattice constants a and c slightly decrease based on Bragg’s law and lattice geometry equations. Furthermore, the relationship between annealing temperature and the limit value of homogeneous Mg is examined, and the results reveal that the latter decreases with the former because of the phase separation of MgO. A probable mechanism of zinc magnesium alloy is introduced to expound on the details of the laser-alloying process.

show abstract

“…At the same time, lots of studies on anion‐substituted ZnO can bring many excellent properties, such as tune bandgap to achieve energy band engineering. Hence, the present study is focused to systematically investigate the structures and the related properties of ZnOTe alloys under high pressure using the density functional theory.…”

Section: Lattice Parameters and Atomic Positions Of Several Metastablmentioning

confidence: 99%

Structural, Electronic, and Optical Properties of ZnO_1 – xTe_x Alloys

Wang

Tian

et al. 2019

Physica Rapid Research Ltrs

View full text Add to dashboard Cite

Based on the ab initio evolutionary algorithm, the Universal Structure Predictor: Evolutionary Xtallography (USPEX) code is used to search for the candidate structures of ZnOTe alloys below 20 GPa. Herein, several metastable structures of ZnO1 – xTex alloys are proposed, namely, Zn4O3Te, Zn2OTe, and Zn5O2Te3 with space groups I‐42m, I‐42d, and C2/m structure, to be stable at 0–10, 0–18, and 0–4 GPa, respectively. From the electronic band structures, it is found that the C2/m Zn5O2Te3 is a metal phase, and the other two structures are semiconductors. Further results show that the bandgap of ZnO1 − xTex first decreases and then increases at an ambient condition with the increase in the Te content, which is in agreement with previous theoretical results, and this trend is also confirmed by the imaginary part of the dielectric function. In addition, the calculated dielectric function results show that the polarization capability of the material is enhanced with the increase in the Te content.

show abstract

The S concentration dependence of lattice parameters and optical band gap of a-plane ZnOS grown epitaxially on r-plane sapphire

Cited by 14 publications

References 31 publications

Band Gap Engineering in β-Ga₂O₃ for a High-Performance X-ray Detector

Band Gap Engineering in β-Ga₂O₃ for a High-Performance X-ray Detector

Rapid and High-Efficiency Laser-Alloying Formation of ZnMgO Nanocrystals

Structural, Electronic, and Optical Properties of ZnO_1 – xTe_x Alloys

Contact Info

Product

Resources

About

The S concentration dependence of lattice parameters and optical band gap of a-plane ZnOS grown epitaxially on r-plane sapphire

Cited by 14 publications

References 31 publications

Band Gap Engineering in β-Ga2O3 for a High-Performance X-ray Detector

Band Gap Engineering in β-Ga2O3 for a High-Performance X-ray Detector

Rapid and High-Efficiency Laser-Alloying Formation of ZnMgO Nanocrystals

Structural, Electronic, and Optical Properties of ZnO1 – xTex Alloys

Contact Info

Product

Resources

About

Band Gap Engineering in β-Ga₂O₃ for a High-Performance X-ray Detector

Band Gap Engineering in β-Ga₂O₃ for a High-Performance X-ray Detector

Structural, Electronic, and Optical Properties of ZnO_1 – xTe_x Alloys