The scattering of long wavelength phonons by current carriers in INSB

Shalyt, S. S.; Tamarin, P.V.; Ivleva, V.S.

doi:10.1016/0375-9601(70)90066-6

Cited by 14 publications

(9 citation statements)

References 4 publications

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“…As was shown experimentally in [20], the intense phonon scattering in this type of crystals is not caused by impurities or imperfections of the lattice but is rather due to charge carriers which a t p > lo1' ~m -~ can be regarded as free ones [18] in the temperature range under investigation. I n this kind of crystals the effective mass of charge carriers (holes) is large, and the mechanism of phonon scattering by charge carriers (11) plays the decisive role accounting for great differences in the phonon thermal conductivity of n-and p-InSb revealed by the experiments.…”

Section: Indium Antimonide Of P-typementioning

confidence: 95%

Thermal conductivity of indium antimonide at low temperatures

Kosarev

Tamarin

Shalyt

1971

Physica Status Solidi (b)

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A detailed experimental investigation was made of the phonon thermal conductivity on n-and p-type indium antimonide of single crystals (carrier concentrations 1014 to lo1* ~m -~) in the temperature range 2 to 100 OK. It is shown that the experimental results may be explained by a new mechanism of phonon scattering by charge carriers in the electrical field of impurity centres [2] and a more consistent consideration of the role of normal processes of phonon-phonon interaction a t low temperatures.Eine ausfiihrliche experimentelle Untersuchung der Phononenwiirmeleitfiihigkeit von n-und p-leitenden Indiumantimonid-Einkistallen (Ladungstriigerkonzentrationen von 1014 bis 10l8 ~r n -~) wurde im Temperaturbereich von 2 bis 100 OK durchgefiihrt. Es wird gezeigt, daB die experimentellen Ergebnisse durch einen neuen Mechanismus der Phononenstreuung an Ladungstriigern im elektrischen Feld von Defektzentren [2] und eine konsistent,ere Beriicksichtigung der Rolle der normalen Prozesse der Phonon-Phonon-Wechselwirkung bei tiefen Temperaturen erkliirt werden konnen.

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Section: Indium Antimonide Of P-typementioning

confidence: 95%

Thermal conductivity of indium antimonide at low temperatures

Kosarev

Tamarin

Shalyt

1971

Physica Status Solidi (b)

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“…The calculated κ natural given by the different lattice constants for each indium-V compound are compared in Figure 7. Figure 7 shows the calculated κ L vs. temperature for the indium-V compounds with experimental data for InP (black circles [59], squares [60], diamond [61], and triangle [62]), InAs (red circles [63], squares [64], diamond [65], and triangles [66]), and InSb (blue circles [56], squares [67], and triangles [68]). The isotope effect is small in the indium-V compounds so we show only the calculated κ natural in Figure 7.…”

Section: Indium-v Compoundsmentioning

confidence: 99%

“…Experimental data is shown for κ L of GaSb (black circles [56]), GaAs (green circles [47] and green triangles [48]), and GaP (red circles [51] and red triangles [52]). InP (black circles [59], squares [60], diamond [61], and triangle [62]), InAs (red circles [63], squares [64], diamond [65], and triangles [66]), and InSb (blue circles [56], squares [67], and triangles [68]). The dashed black curve corresponds to κ natural for InP with harmonic and anharmonic IFCs determined using the lattice constant from energy minimization, a InP =5.79Å.…”

Section: Figure Captionsmentioning

confidence: 99%

Ab initiothermal transport in compound semiconductors

2013

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We use a recently developed ab initio approach to calculate the lattice thermal conductivities of compound semiconductors. An exact numerical solution of the phonon Boltzmann transport equation is implemented, which uses harmonic and anharmonic interatomic force constants determined from density functional theory as inputs. We discuss the method for calculating the anharmonic interatomic force constants in some detail, and we describe their role in providing accurate thermal conductivities in a range of systems. This first-principles approach obtains good agreement with experimental results for well-characterized systems (Si, Ge, and GaAs).We determine the intrinsic upper bound to the thermal conductivities of cubic aluminum-V, gallium-V, and indium-V compounds as limited by anharmonic phonon scattering. The effects of phonon-isotope scattering on the thermal conductivities are examined in these materials and compared to available experimental data. We also obtain the lattice thermal conductivities of other technologically important materials, AlN and SiC. For most materials, good agreement with the experimental lattice thermal conductivities for naturally occurring isotopic compositions is found. We show that the overall frequency scale of the acoustic phonons and the size of the gap between acoustic and optic phonons play important roles in determining the lattice thermal 2 conductivity of each system. The first-principles approach used here can provide quantitative predictions of thermal transport in a wide range of systems. 63.20.kg,

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“…The same conclusion was reached thanks to a detailed study of the heat conductivity in InSb as a function of the doping and of the compensation [35]. This consideration will be of primary importance in further measurements to follow, where the T pulses will serve as calibrators of the heat-pulse signals.…”

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confidence: 61%

“…Let us remark that in heat-conductivity measurements, where the mean phonon frequency is tuned by varying the temperature, the Fermi-surface cut-off does not usually show [35], except, to a certain extent, in heavily doped p-type samples [37]. Here Fig.…”

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confidence: 99%