The second and third-harmonic generation of modified Gaussian quantum dots under influence of polaron effects

Khordad, R.; Bahramiyan, H.

doi:10.1016/j.spmi.2014.09.036

Cited by 52 publications

(11 citation statements)

References 37 publications

(33 reference statements)

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“…Effects of SOI and e‐e interaction on magnetic properties of QDs have attracted more attention in the past years . It is well known that effect of three‐electron interaction on magnetic properties of QDs is an interesting problem.…”

Section: Introductionmentioning

confidence: 99%

Magnetic properties in three electrons under Rashba spin‐orbit interaction and magnetic field

Khordad

Vaseghi

2019

Int J of Quantum Chemistry

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In this work, we study three-electron magnetic susceptibility in quantum dots under Rashba spin-orbit interaction (SOI) and magnetic field by an analytical methodology.The Hamiltonian of the system is separated to center of mass and relative terms using the Jacobi transformations and the hyperspherical coordinates. By solving Schrodinger equation, energy levels and thereby the susceptibility are calculated using canonical ensemble. At zero temperature, the magnetization reduces with increasing magnetic field with and without Rashba SOI in three-electron-quantum dot without electron-electron (e-e) interaction. Also, SOI slightly changes the magnetization for three-electron-quantum dot without e-e interaction. At nonzero temperature, the magnetization shows a paramagnetic peak when the magnetic field increases. This peak position changes under the SOI. In the presence of e-e interaction, the susceptibility enhances with raising magnetic field and it shows a maximum.The susceptibility at low magnetic field is negative and then it becomes positive.The susceptibility with e-e interaction and without SOI is always diamagnetic and its magnitude reduces with enhancing magnetic field. The susceptibility shows a transition between diamagnetic and paramagnetic with e-e interaction and SOI. K E Y W O R D Selectron-electron interaction, magnetization, quantum dot, Rashba spin-orbit interaction

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Section: Introductionmentioning

confidence: 99%

Magnetic properties in three electrons under Rashba spin‐orbit interaction and magnetic field

Khordad

Vaseghi

2019

Int J of Quantum Chemistry

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“…Here z represents the growth direction, V 0 and L (=10 nm in this work) are the depth and effective well width of the confinement potential, respectively . In the present study, considering the influence of PDM, the electron effective mass dependence upon the growth coordinate in the Gaussian QW is defined as follows

m true(z true) = m_{1}^{*} true(\frac{m_{2}^{*}}{m_{1}^{*}} + \frac{m_{1}^{*} - m_{2}^{*}}{m_{1}^{*}} e^{- z^{2} / d^{2}} true)

where

m_{1}^{*}

and

m_{2}^{*}

are the electron effective masses in the bulk GaAs and Al x Ga 1− x As, respectively, and the parameter d defines the effective length and uniformity of the PDM distribution.…”

Section: Theoretical Frameworkmentioning

confidence: 99%

“…Here z represents the growth direction, V 0 and L (¼10 nm in this work) are the depth and effective well width of the confinement potential, respectively. [59][60][61] In the present study, considering the influence of PDM, the electron effective mass dependence upon the growth coordinate in the Gaussian QW is defined as follows…”

Section: Theoretical Frameworkmentioning

confidence: 99%

Effect of Intense Laser Field in Gaussian Quantum Well With Position‐Dependent Effective Mass

Sarı

Kasapoğlu

Şakiroğlu

et al. 2019

Physica Status Solidi (b)

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In this paper, the effects of the intense laser field (ILF) and position dependent mass (PDM) on the electronic structure in a Gaussian quantum well are theoretically deduced by using the diagonalization method for obtaining energy levels and corresponding wave functions. We find that, in the case of narrow PDM distribution, the dependence of the energy levels on the effective length of the electron mass distribution becomes more apparent, and the evolution of the dressed mass with ILF is significant. Given this feature, it is more meaningful to take into consideration the PDM of the electron in the low dimensional semiconductor heterostructures under the ILF.

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“…Therefore, QDs are materials with great optical response [26]. This case prompted researchers to investigate optical phenomena such as optical absorption [27,28], optical rectification [29][30][31], second and thirdorder harmonic generations [32][33][34] and refractive index changes [35][36][37]. Optical absorption coefficients (OACs) of QDs which including impurity have different confinement potentials have been previously studied by many authors [38][39][40][41][42][43][44][45][46][47][48][49][50].…”

Section: Introductionmentioning

confidence: 99%

Binding Energy And Absorption of Donor Impurity In Spherical GaAs/AlxGa1-x As Quantum Dots With Konwent Potential

Kasapoğlu

Sarı

et al. 2021

Preprint

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In this study, the electronic and optical properties of single or core/shell quantum dots, which are formed depending on the parameters in the selected Konwent potential, are investigated. Namely, the effects of the size and geometric shapes of quantum dots on the binding energy of the on-center donor impurity, the total absorption coefficient and refractive index which are including transitions between the some confined states, and the electromagnetically induced transparency between the lowest six confined states related to the donor impurity are investigated. We have used the diagonalization method by choosing a wave function based on the Bessel and Spherical Harmonics orthonormal function to find the eigenvalues and eigenfunctions of the electron confined within the quantum dots which have different types mentioned above. To calculate the optical absorption coefficients and electromagnetically induced transparency related to shallow-donor impurity, a two- and three-level approach in the density matrix expansion is used, respectively.

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The second and third-harmonic generation of modified Gaussian quantum dots under influence of polaron effects

Cited by 52 publications

References 37 publications

Magnetic properties in three electrons under Rashba spin‐orbit interaction and magnetic field

Magnetic properties in three electrons under Rashba spin‐orbit interaction and magnetic field

Effect of Intense Laser Field in Gaussian Quantum Well With Position‐Dependent Effective Mass

Binding Energy And Absorption of Donor Impurity In Spherical GaAs/AlxGa1-x As Quantum Dots With Konwent Potential

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