The Second Conference on Microelectronics, Microsystems and Nanotechnology

Nassiopoulou, A. G.; Papanikolaou, Nikos; Tsamis, C.

doi:10.1088/1742-6596/10/1/e01

Cited by 3 publications

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Computer modeling of single-layer nanocluster formation in a thin SiO2 layer buried in Si by ion mixing and thermal phase decomposition

Prüfer

Möller

Heinig

et al. 2019

Journal of Applied Physics

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A single sheet of Si nanoclusters with an average diameter of about 2 nm has been formed in a 30 nm Si/7 nm SiO2/Si layer stack by 50 and 60 keV Si+ ion-beam mixing at room temperature and fluences between 8.5 ⋅ 1015 and 2.6 ⋅ 1016 ions/cm2 and by subsequent thermal annealing at a temperature above 1000 °C. Computer modeling of the process is accomplished by TRIDYN dynamic ballistic simulation of ion mixing and subsequent lattice kinetic Monte Carlo simulation of the phase decomposition of substoichiometric silicon oxide into Si nanoclusters in a SiO2 matrix. The simulation algorithms are briefly described with special emphasis on the choice of governing parameters for the present system. In comparison to the experimental results, it is concluded that the predicted ion mixing profiles overestimate the interface broadening. This discrepancy is attributed to the neglect of chemical driving forces in connection with thermal-spike induced diffusion, which tends to reconstitute the Si/SiO2 interfaces. With a corresponding correction and a suitable number of Monte Carlo steps, the experimentally obtained areal densities and average diameters of the nanoclusters are successfully reproduced.

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Computer modeling of single-layer nanocluster formation in a thin SiO2 layer buried in Si by ion mixing and thermal phase decomposition

Prüfer

Möller

Heinig

et al. 2019

Journal of Applied Physics

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Dynamic behavior of Ti/4H-SiC Schottky diodes

Shili

Karoui

Gharbi

et al. 2012

2012 16th IEEE Mediterranean Electrotechnical Conference

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A Microstructural Study of the InSb〈Ni, Mn〉 alloy

Sanygin,

Pashkova

2023

Žurnal neorganičeskoj himii

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The InSb + 1 at % Ni + 1 at % Mn alloy was studied by optical microscopy and scanning electron microscopy. A Heusler phase based on NiMnSb in the form of microinclusions on InSb dislocations was detected. The chemical composition of the microinclusions on dislocation pile-ups ranges from Ni1.1MnSb to Ni1.2MnSb, and that on individual dislocations is close to Ni1.1MnSb. However, the synthesis gives rise to bulk structural defects in the form of micropores and to elastic deformations around them, which are the main obstacles to the creation of a coherent material with unhindered movement of polarized electrons throughout the volume.

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The Second Conference on Microelectronics, Microsystems and Nanotechnology

Cited by 3 publications

References 0 publications

Computer modeling of single-layer nanocluster formation in a thin SiO2 layer buried in Si by ion mixing and thermal phase decomposition

Computer modeling of single-layer nanocluster formation in a thin SiO2 layer buried in Si by ion mixing and thermal phase decomposition

Dynamic behavior of Ti/4H-SiC Schottky diodes

A Microstructural Study of the InSb〈Ni, Mn〉 alloy

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