The silicon radio decade

Sevenhans, J.; Eynde, F. Op't; Reusens, P.

doi:10.1109/22.981276

Cited by 32 publications

(9 citation statements)

References 9 publications

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“…This offered the advantages of higher f T (50 GHz) and lower base resistance, resulting in lower transmit noise and higher receiver sensitivity (several emerging applications use carrier frequencies up to 5 GHz, requiring transistor f T of 50 GHz) [1]. But with CMOS remaining the dominant technology, the Si metal-oxide-semiconductor field-effect transistor (MOSFET) is being continuously scaled down and fundamental limits are being reached.…”

Section: Introductionmentioning

confidence: 99%

SiGe virtual substrate HMOS transistor for analogue applications

Michelakis¹,

Despotopoulos²,

Gaspari³

et al. 2004

Applied Surface Science

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Silicon-germanium (SiGe) heterojunction metal-oxide-semiconductor field-effect transistors (SiGe HMOSFETs) have been successfully fabricated on Si substrate. The semiconductor heterostructure, which was grown by gas-source molecular beam epitaxy (GS-MBE), was initiated by the deposition of a Si 0.7 Ge 0.3 ''virtual substrate''. The n-type transistors were fabricated using a standard MOS process. The channel is a thin, undoped layer of strained Si and is buried below an arsenic-doped Si 0.7 Ge 0.3 layer, which provides the carriers. The devices exhibited excellent current-voltage (I-V) characteristics in terms of transconductance and drain current, with no breakdown or leakage. A level-1 model was extracted, for use in circuit design. The results suggest that the realisation of buried-channel SiGe n-HMOSFETs is feasible in MOS processes. These devices are of particular importance in analogue applications. #

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Section: Introductionmentioning

confidence: 99%

SiGe virtual substrate HMOS transistor for analogue applications

Michelakis¹,

Despotopoulos²,

Gaspari³

et al. 2004

Applied Surface Science

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“…5 because it requires less baseband hardware and is one of the most amenable to monolithic integration. However, implementation issues such as the correction of static and dynamic dc offsets at baseband caused by leakage and selfmixing of the local oscillator [11] must be considered.…”

Section: A Next-generation Handsetsmentioning

confidence: 99%

SiGe Radio Frequency ICs for Low-Power Portable Communication

Long

2005

Proc. IEEE

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“…This was due to a lack of suitable technology and RF/Analog and Mixed Signal (RFA&MS) design tools. It is the premise of this article that SiGe BiCMOS and RF CMOS are two technologies that are now available that satisfy the technology needs for highly complex RF/A&MS products [4,5]. However, the EDA toolset for highly complex RF/A&MS products is still lacking.…”

Section: Introductionmentioning

confidence: 97%

Imagine the Future in Telecommunications Technology

Harame

Joseph

Coolbaugh

et al. 2002

32nd European Solid-State Device Research Conference

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The wired (networking) and wireless telecommunications areas are rapidly expanding in applications and data rates. This drives a need for highly complex RF/Analog and Mixed Signal products. SiGe BiCMOS and RF CMOS are the two technologies that are capable of fulfilling the technology requirements for these products. The active and passives device suite is described. The application areas for Bipolar and CMOS are discussed. SiGe BiCMOS products examples are given.

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The silicon radio decade

Cited by 32 publications

References 9 publications

SiGe virtual substrate HMOS transistor for analogue applications

SiGe virtual substrate HMOS transistor for analogue applications

SiGe Radio Frequency ICs for Low-Power Portable Communication

Imagine the Future in Telecommunications Technology

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