SiGe Radio Frequency ICs for Low-Power Portable Communication

Long, John R.

doi:10.1109/jproc.2005.852227

Cited by 23 publications

(6 citation statements)

References 73 publications

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“…Following Moor's Law, the supply voltage of SoC has been decreasing aggressively [1,2]. Transformer can be used as coupling stage without any limitation in voltage swing.…”

Section: Introductionmentioning

confidence: 99%

“…And it can also ideally separate the DC path of two coupled stages. Consequently, transformer has been widely used in low-power SoC's [2,3]. W Lacking of a general and accurate approach, the transformer modeling takes too many efforts during circuit design.…”

Section: Introductionmentioning

confidence: 99%

“…W Lacking of a general and accurate approach, the transformer modeling takes too many efforts during circuit design. Furthermore, the inaccuracy of the model introduces obvious errors which limit the application of transformer [1][2][3][4][5].…”

Section: Introductionmentioning

confidence: 99%

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A novel approach to parameter extraction for on-chip transformers

Wei

Shi

et al. 2007

Analog Integr Circ Sig Process

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In this paper, a novel approach to parameter extraction for on-chip transformers based on four-port Y-parameter is presented. Compared to the previous researches, the proposed fully parameter extraction from Yparameter has better accuracy and feasibility for both the simulation before prototype and the improvement of the design after the measurement. And the 4-port model of transformer provides the solution of the fully differential applications. The model agrees very well with measurements for a variety of transformer configuration up to its self-resonant frequency.

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“…Following Moor's Law, the supply voltage of SoC has been decreasing aggressively [1,2]. Transformer can be used as coupling stage without any limitation in voltage swing.…”

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

See 1 more Smart Citation

A novel approach to parameter extraction for on-chip transformers

Wei

Shi

et al. 2007

Analog Integr Circ Sig Process

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“…Close to 30GHz several systems, expecting being widen used in the near future, are already operating, such as terrestrial LMDS (Local Multipoint Distribution System) and satellite Ka band VSAT (Very Small Aperture Terminal). At these high frequencies GaAs based technologies, especially GaAs p-HEMT technology, are the leaders but recently Si CMOS technologies are competing with them, mainly due to the high f T and f max (over 100GHz) of SiGe BiCMOS technologies HBTs [2]. Their advantages are mainly the lower cost, reduced circuit area and compatibility with low frequency and baseband processing technology, opening the possibility of having end user terminals with affordable price.…”

Section: Introductionmentioning

confidence: 99%

30GHz Amplifiers with 0.25¿m SiGe BiCMOS

Torres

Vaz

Freire

2007

2007 14th IEEE International Conference on Electronics, Circuits and Systems

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In this paper the possibility of using a low cost SiGe:C BiCMOS technology dedicated to few GHz applications up to 30GHz is discussed. Spiral inductors with SRF higher than 30GHz, are not available at the foundry library. Accordingly, inductors with a SRF higher than 45GHz were obtained, however their Q is only 5 at 30GHz. The test and modeling technique is presented. The design, implementation and test of a two stages common emitter amplifier without inductors are also presented. It has a 8dB gain at 28GHz and 1 dB bandwidth from 5 to 10GHz with a maximum gain of 23dB (best frequency range for this technology). The return losses are better then 10dB from 10 to 35GHz.

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“…Operation in the several GHz band has become possible [1] [2]. Figure 1 shows examples of amplifiers of the (a) high frequency and (b) low frequency types.…”

Section: Introductionmentioning

confidence: 99%

5.8GHz high frequency circuits using low frequency circuit configuration for low-power-consumption and high integration

Tsukada

Hayashi

Uda

Digest of Papers. 2005 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, 2005.

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A significant increase in the speed of Si transistors has been achieved in recent years. Circuit forms that were previously applied to low frequency operation are now being realized in high frequency circuits. Therefore, low electrical power consumption and higher integration are becoming more advanced. We recognize that the essence of this drastic change in circuit technology is the conversion of circuits from the electrical power transmission form to the voltage transmission form. It is necessary to use small transistors so that the output impedance of the small transistors does not include a reactance component. Based on this idea, we used the SiGe BiCMOS process to design and fabricate an ASK modulator and a receiver mixer for 5.8GHz operation. The former device has a current drain of 6.5mA and a 38.2dB ON/OFF ratio, while the latter device has a drain of 3.4mA at 2V supply.

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SiGe Radio Frequency ICs for Low-Power Portable Communication

Cited by 23 publications

References 73 publications

A novel approach to parameter extraction for on-chip transformers

A novel approach to parameter extraction for on-chip transformers

30GHz Amplifiers with 0.25¿m SiGe BiCMOS

5.8GHz high frequency circuits using low frequency circuit configuration for low-power-consumption and high integration

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