The Simulation Study of Process Variation on Threshold Voltage in 180nm Floating-Gate device

Cong, Thinh Dang; Le-Thanh, Toi; Tri, Hao Mai; Hoang, Trang

doi:10.1109/iscit.2019.8905125

Cited by 1 publication

(2 citation statements)

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“…The CMOS technology has been developing over the past many years thanks to its benefits like high integration density, low fabrication costs, and high operating speeds. In addition, many novel techniques of circuit design have been shown ranging from memories, analog mixed-signal, RFIC [1] - [7] to mm-Wave IC design [8] - [9].…”

Section: Introductionmentioning

confidence: 99%

“…The process variation effects on the threshold voltage, which is a vital parameter of the device, are studied by using the TCAD simulation tools. Authors introduced the floating-gate device and presented ideas about how to study the process variation on threshold voltage in 180nm floating-gate device in the "2019 19th International Symposium on Communications and Information Technologies (ISCIT)" [1] and the following paper is an extension of this work.…”

Section: Introductionmentioning

confidence: 99%

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Applications of TCAD Simulation Software for Fabrication and study of Process Variation Effects on Threshold Voltage in 180nm Floating-Gate Device

Cong¹,

Le-Thanh²,

Tri³

et al. 2020

Adv. sci. technol. eng. syst. j.

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In this work, a study of the process variation effects on the threshold voltage of a floatinggate device is proposed. The study demonstrates the sensitivity of the threshold voltage to five geometrical parameters including gate length, gate width, tunneling gate oxide thickness, bottom oxide-nitride-oxide oxide thickness, and nitride spacer thickness. This paper also proposed a detailed flow to fabricate the floating-gate device for CMOS 180nm process, which is used to design the floating-gate device for the study. This paper used the TCAD tools including Athena, Devedit3D, and Atlas for the simulations.

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