2012
DOI: 10.4028/www.scientific.net/amr.500.371
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The Simulation Study of Si<sub>3</sub>N<sub>4 </sub>Ceramics Nano-Cutting Process

Abstract: Silicon nitride nanoscale cutting model was established by molecular dynamics simulation, and interactions force between atoms of work-piece was calculated by Tersoff potential function. Through the three-dimensional simulation of silicon nitride nanocutting process, the changes of cutting force, kinetic energy and potential energy in the nanoscale cutting process, and the effects of cutting thickness and cutting speed on the entire cutting process were analyzed. The results showed that the kinetic energy, pot… Show more

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