2018
DOI: 10.1016/j.orgel.2017.11.001
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The spin-dependent transport and optoelectronic properties of the 6,6,12-graphyne-based magnetic tunnel junction devices

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Cited by 7 publications
(4 citation statements)
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“…The band gaps of APNTs are larger than that of ZPNTs in the same diameter range. The band gaps of PNTs gradually increase as nanotube diameter increases, which is consistent with previous theoretical report photo-excitations [29][30][31]. Through the microscopic images describing the origin of the polarized photocurrent in figure 1(c), we can comprehend the diversification of the spin photoresponse.…”
Section: Resultssupporting
confidence: 88%
See 1 more Smart Citation
“…The band gaps of APNTs are larger than that of ZPNTs in the same diameter range. The band gaps of PNTs gradually increase as nanotube diameter increases, which is consistent with previous theoretical report photo-excitations [29][30][31]. Through the microscopic images describing the origin of the polarized photocurrent in figure 1(c), we can comprehend the diversification of the spin photoresponse.…”
Section: Resultssupporting
confidence: 88%
“…photo-excitations[29][30][31]. Through the microscopic images describing the origin of the polarized photocurrent in figure1(c), we can comprehend the diversification of the spin photoresponse.…”
mentioning
confidence: 98%
“…Both GDYNRs and GYNRs have unique electrical and optical properties that are strongly dependent on their chemical structure, particularly their width and edge configuration. [152][153][154][155][156][157][158][159][160][161][162][163][164] Therefore, the controllable synthesis of GYNRs and GDYNRs with precise chemical structure is of great significance for its basic research and device applications.…”
Section: Potential Applications Of Gynrs and Gdynrsmentioning
confidence: 99%
“…Tao et al demonstrated a new scheme for generating fully spin-polarized photocurrent by constructing a van der Waals h-BN/ZGNR/h-BN heterostructure [19]. Furthermore, the robust generation scheme of pure spin current by light irradiation in ZGNR-based devices has been well established [20,21]. However, most schemes have the same problem that the energy difference between the ferromagnetic (FM) and anti-FM (AFM) state in their adopted materials is negligibly small or even disappear, making the spin polarization and the generation of current virtually difficult to observe in the AFM state based on which desired spin polarization is predicted.…”
Section: Introductionmentioning
confidence: 99%