2011
DOI: 10.1016/j.solmat.2010.12.019
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The spray-ILGAR® (ion layer gas reaction) method for the deposition of thin semiconductor layers: Process and applications for thin film solar cells

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Cited by 39 publications
(24 citation statements)
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“…From our previous study (Fischer et al, 2011) we know that increasing the carrier gas flow rate shortens the residence time of the aerosol over the substrate. Therefore, we increased the N 2 flow rate from 5 L/min to 7 L/min and used the H 2 S flow rate of 5 mL/min (recipe 2) while other deposition parameters were as mentioned in the beginning of this section.…”
Section: Properties Of Zn(os) Layersmentioning
confidence: 96%
See 1 more Smart Citation
“…From our previous study (Fischer et al, 2011) we know that increasing the carrier gas flow rate shortens the residence time of the aerosol over the substrate. Therefore, we increased the N 2 flow rate from 5 L/min to 7 L/min and used the H 2 S flow rate of 5 mL/min (recipe 2) while other deposition parameters were as mentioned in the beginning of this section.…”
Section: Properties Of Zn(os) Layersmentioning
confidence: 96%
“…In this study, a simple, fast and costefficient atmospheric pressure aerosol assisted chemical vapour deposition (AACVD) was used. The AACVD is a simple non-vacuum process where the deposition temperatures do not exceed 250°C (Fischer et al, 2011) and the deposition of the solar cell component is a continuous operation; breaking of the vacuum for the P2 scribing (second scribing step in monolithically integrated devices) between intrinsic ZnO (i-ZnO) and n-type (n-ZnO), that is necessary for the regular solar cell structure where P2 is applied after the i-ZnO deposition, is avoided.…”
mentioning
confidence: 99%
“…Aluminum Oxide (Al 2 O 3 ) was deposited using the Ion Layer Gas Reaction (Spray-ILGAR) method [5] at temperature of 500°C, with Nitrogen (carrier gas) flow rate of 5L/min, and a solution rate of 100 ml per 60 minutes.…”
Section: A Materials and Methodsmentioning
confidence: 99%
“…TiO 2 was deposited at a substrate temperature of 460 • C by using the Ion Layer Gas Reaction, which was carried out in Helmholtz-Zentrum Berlin für Materialien und Energie (HZB), Germany, with a carrier gas (N 2 ) flow rate of 5 L/min. The Spray-ILGAR technique was developed and patented by HZB [9]. The solution was sprayed by an ultrasonic nebulizer, which are transported by the carrier gas (nitrogen) and subsequently deposited on the heated substrate, for 12 min.…”
Section: Preparation Of Titania On Stainless Steelmentioning
confidence: 99%
“…Spray-ILGAR is an extension of the ion layer gas reaction (ILGAR) technique, which was developed and patented by the group of Professor Dr. Christian-Herbert Fischer at the Helmholtz-Zentrum Berlin for Materials and Energy, in Berlin, Germany [8], and which is equivalent to the aerosol assisted chemical vapour depostition (AACVD) method [9]. ILGAR is a non-vacuum, thin-film deposition technique, involving a sequential and cyclic process that enables the deposition of semiconductor thin films, especially chalcopyrite absorber layers and buffer layers.…”
Section: Introductionmentioning
confidence: 99%