The Stopping and Range of Ions in Solids

Biersack, J.P.; Ziegler, J. F.

doi:10.1016/b978-0-12-780621-1.50005-8

Cited by 3,558 publications

(2,074 citation statements)

References 58 publications

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“…Figure 11. SRIM simulation [29] for the irradiation of He + ions with an energy of 2 MeV into silicon. The other kind of disorder is the stopping of the penetrating ions ( Fig.…”

Section: Discussionmentioning

confidence: 99%

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Correlating Raman peak shifts with phase transformation and defect densities: a comprehensive TEM and Raman study on silicon

Wermelinger

Spolenak

2009

J Raman Spectroscopy

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Silicon is the most often used material in micro electromechanical systems (MEMS). Detailed understanding of its mechanical properties as well as the microstructure is crucial for the reliability of MEMS devices. In this paper, we investigate the microstructure changes upon indentation of single crystalline (100) oriented silicon by transmission electron microscopy (TEM) and Raman microscopy. TEM cross sections were prepared by focused ion beam (FIB) at the location of the indent. Raman microscopy and TEM revealed the occurrence of phase transformations and residual stresses upon deformation. Raman microscopy was also used directly on the cross-sectional TEM lamella and thus microstructural details could be correlated to peak shape and peak position. The results show, however, that due to the implanted Ga + ions in the lamella the silicon Raman peak is shifted significantly to lower wavenumbers. This hinders a quantitative analysis of residual stresses in the lamella. Furthermore, Raman microscopy also possesses the ability to map deformation structures with a lateral resolution in the submicron range.

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“…Figure 11. SRIM simulation [29] for the irradiation of He + ions with an energy of 2 MeV into silicon. The other kind of disorder is the stopping of the penetrating ions ( Fig.…”

Section: Discussionmentioning

confidence: 99%

“…The program Stopping and Range of Ions in Matter (SRIM) allows simulating the behavior of ions [29] such as collision events as well as the possible penetration depth of the ions and was utilized to simulate the interaction of helium ions with silicon. Figure 3(a) shows the result of the Raman map around the Vickers indent.…”

Section: Methodsmentioning

confidence: 99%

Correlating Raman peak shifts with phase transformation and defect densities: a comprehensive TEM and Raman study on silicon

Wermelinger

Spolenak

2009

J Raman Spectroscopy

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“…The sample temperature during irradiation was varied from RT to 400 C. The beam current was maintained at around 1 mA/cm 2 and the samples were mounted on a water-cooled target holder in order to avoid beam heating. The TRIM95 code [18] was used to simulate the Xe-ion range and deposited energy distribution.…”

Section: Experimental Procedures and Resultsmentioning

confidence: 99%

Mixing and Silicide Formation during Xe-Ion Beam Irradiations of Ta/Si Bilayers

Dhar

Milosavljević

Bibić

et al. 2000

phys. stat. sol. (b)

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“…[8] fluorine ions of 20 keV were implanted into TiAl with a fluence of 2 Â 10 17 F/cm 2 . The chosen energy corresponds to a projected range of 34 nm due to the stopping power of fluorine ions in TiAl as calculated by the software package TRIM [11]. In the case of oxidation up to 500 h/900 8C/air only one side of the specimen was implanted whereas for oxidation times >500 h both sides including the edges were implanted.…”

Section: Methodsmentioning

confidence: 99%

Modelling of the long time stability of the fluorine effect in TiAl oxidation

Zschau

Schütze

2008

Materials & Corrosion

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Recently the target temperature of components manufactured from g-TiAl alloys like turbine blades, turbocharger rotors or automotive valves has been increased to 900 8C. However, there is an insufficient oxidation resistance above 750 8C. One method used to improve the g-TiAl oxidation behaviour is the so-called fluorine microalloying effect. After application of fluorine to the TiAl surface by ion implantation or treatment with diluted HF and oxidation at 900 8C in air a dense alumina layer is formed.However, after the treatments a distinct loss of fluorine was observed during heating and within the first hours of oxidation. In this work, the long time behaviour during isothermal and cyclic oxidation up to 1500 h/900 8C/air was investigated showing a slow fluorine decrease. The alumina layer acts as a diffusion barrier for fluorine, whereas fluorine diffuses into the metal. The diffusion coefficient was calculated. The results fit the theoretical model of the fluorine effect.

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The Stopping and Range of Ions in Solids

Cited by 3,558 publications

References 58 publications

Correlating Raman peak shifts with phase transformation and defect densities: a comprehensive TEM and Raman study on silicon

Correlating Raman peak shifts with phase transformation and defect densities: a comprehensive TEM and Raman study on silicon

Mixing and Silicide Formation during Xe-Ion Beam Irradiations of Ta/Si Bilayers

Modelling of the long time stability of the fluorine effect in TiAl oxidation

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