The structure and opto–thermo electronic properties of a new (Bi(Bi₂S₃)₉I₃)_2/3 hexagonal nano-/micro-rod

Abstract

The semiconductor optoelectronic properties of an inorganic (Bi(BiS)I) hexagonal nano-/micro-rod are firstly explored herein. Transmittance and thermoreflectance measurements show that (Bi(BiS)I) hexagonal rods possess an indirect gap of 0.73 eV and a direct gap of 1.08 eV, respectively. Hot-probe measurements of (Bi(BiS)I) reveal the p-type semiconductor behavior and high thermoelectric voltage. Polarized Raman measurements of the m-plane (Bi(BiS)I) (along c and perpendicular to the c axis) identify the structural anisotropy of the hexagonal nano-/micro-rod.

Modulation of transport properties via S/Br substitution: solvothermal synthesis, crystal structure, and transport properties of Bi13S17Br3

“…21,23 On the other hand, direct bandgaps in the 0.82–1.08 eV range have been reported for Bi 13 S 18 I 2 and Bi 19 S 27 I 3 . 19,35…”

“…21,23 On the other hand, direct bandgaps in the 0.82-1.08 eV range have been reported for Bi 13 S 18 I 2 and Bi 19 S 27 I 3 . 19,35 We also studied the thermal stabilities of Bi 13 S 17 Br 3 and Bi 13 S 18 I 2 before conducting transport property measurements. Results from the TGA/DSC analyses of the two compounds are depicted in Fig.…”

Co3O4–Au Polyhedra: A Multifunctional Signal Amplifier for Sensitive Photoelectrochemical Assay

“…Due to the narrow band gap and high photon-electron conversion efficiency, − Bi 2 S 3 NPs were used as photoactive materials and Bi 2 S 3 NPs-modified ITO slices were used as photoelectrode. The SEM, TEM, and high-resolution TEM (HRTEM) images of the as-synthesized Bi 2 S 3 NPs are shown in Figure .…”

“…Due to the important role of caspase-3 in the apoptosis-associated study, − a new p-type semiconducting Co 3 O 4 –Au polyhedral-based PEC sensor has been constructed for caspase-3 assay (Scheme ). In this PEC sensing platform, the n-type semiconductor Bi 2 S 3 -modified indium–tin oxide (ITO) slice was used as the photoelectrode due to a direct band gap of 1.3 eV and high photon-electron conversion efficiency of Bi 2 S 3 . − The Co 3 O 4 –Au polyhedra were used as the multifunctional signal amplifier to amplify the PEC response signals: (1) the p-type semiconducting Co 3 O 4 –Au polyhedra can quench the photocurrents of n-type Bi 2 S 3 because of competitive consumption of electron donors and irradiating light energy of the PEC system (p–n-type semiconductor quenching effect); (2) the Co 3 O 4 –Au polyhedra can act as peroxidase mimetics to efficiently catalyze 4-chloro-1-naphthol (4-CN) by H 2 O 2 to produce benzo-4-chloro-hexadienone (4-CD) precipitates on the surface of the sensor, which will obviously decrease the photocurrents (mimetic enzymatic catalytic precipitation effect); (3) this 4-CD precipitates can act as electron acceptors to enhance the quenching ability of Co 3 O 4 –Au polyhedra; (4) the steric hindrance effect from the Co 3 O 4 –Au polyhedra can retard the transport of electron donor and acceptor, resulting in the decrease of the photocurrents. Based on the multifunctional Co 3 O 4 –Au polyhedra, caspase-3 is detected sensitively with a wide linear response range (0.5–50 ng mL –1 ) and a low detection limit (0.10 ng mL –1 ).…”

Optical Study of High Quality c -ZnS Crystals for UV Photodiodes and Photoelectrochemical Applications

“…Within standard error, the stoichiometry ratio is matched well with the nominal content. The result also indicates a little bit sulfur deficiency existed in the ZnS, similar to many of the other chalcogenides compounds . Figure (b) shows the SAED pattern of the ZnS with a zone axis along [222] direction, where a clear dotted pattern with relevant (202) and (220) planes (spots) is indicated.…”