In this study, two phenol compounds, magnolol and honokiol, were extracted from Magnolia officinalis and identified by LC-MS, 1H- and 13C-NMR. The magnolol and honokiol were shown to be effective against seven pathogenic fungi, including Alternaria alternata (Fr.) Keissl, Penicillium expansum (Link) Thom, Alternaria dauci f.sp. solani, Fusarium moniliforme J. Sheld, Fusarium oxysporum Schltdl., Valsa mali Miyabe & G. Yamada, and Rhizoctonia solani J.G. Kühn, with growth inhibition of more than 57%. We also investigated the mechanisms underlying the potential antifungal activity of magnolol and honokiol. The results showed that they inhibited the growth of A. alternata in a dose-dependent manner. Moreover, magnolol and honokiol treatment resulted in distorted mycelia and increased the cell membrane permeability of A. alternata, as determined by conductivity measurements. These results suggest that magnolol and honokiol are potential antifungal agents for application against plant fungal diseases.

We fabricated the HfZrO 2 (HZO) ferroelectric fin field-effect transistors (Fe-FinFET) with fin width of 60 nm and gate length of 100 nm for ferroelectric nonvolatile memory operations. The fabricated Fe-FinFET exhibited a large memory window (MW) of 1.5 V and high (100 ns) program/erase speeds at ±5 V. After 10 5 program/erase cycles, the MW was maintained at 1.09 V and the retention time was measured up to 10 4 s with no degradation. The fabricated HZO Fe-FinFET is compatible with the current FinFET process and has a high MW, a fast program/erase speed, and excellent reliability. Therefore, the fabricated Fe-FinFET is a promising candidate for high-density ferroelectric field-effect transistor memory applications.

Structural, optical and photodetector properties of InS stripe-like crystals have been clearly demonstrated.

The semiconductor optoelectronic properties of an inorganic (Bi(BiS)I) hexagonal nano-/micro-rod are firstly explored herein. Transmittance and thermoreflectance measurements show that (Bi(BiS)I) hexagonal rods possess an indirect gap of 0.73 eV and a direct gap of 1.08 eV, respectively. Hot-probe measurements of (Bi(BiS)I) reveal the p-type semiconductor behavior and high thermoelectric voltage. Polarized Raman measurements of the m-plane (Bi(BiS)I) (along c and perpendicular to the c axis) identify the structural anisotropy of the hexagonal nano-/micro-rod.